Magnetron Sputter Deposition And Characterization Of P-CuAlO₂ Thin Film

As a new type of semiconductor material,p-type CuAlO2 has very good application prospects in fully transparent devices.However,their applications are restricted due to factors such as difficult material preparation,low electrical conductivity,and great differences in the properties of thin films obtained by different preparation methods.So the preparation and study of CuAlO2 materials are of great significance.In this paper,Zn doped CuAlO2 targets were successfully prepared by solid phase sintering reaction twice calcined,using Cu2O,Al2O3 and ZnO powders with a purity of 99.9%as experimental raw materials,and Zn doped CuAlO2 thin films were prepared on a quartz glass substrate by magnetron sputtering.XRD,SEM,Hall and other tests were carried out to characterize the structure and performance of the target and film.The main work of the dissertation carried out as follow:1.The effect of different concentrations of Zn doping on the target structure,morphology,electrical conductivity and magnetic properties has been studied.The result shows that doping Zn will increase the resistivity and crystal grains of target,In addition,the doping of Zn makes CuAlO2 show obvious magnetic characteristics,and its coercivity decreases first and then increases as the doping concentration increases.The coercivity of the CuAlO2 target reaches a maximum of 95.8 Oe when the doping concentration is reached 10%.2.The effects of different argon-oxygen ratio on the phase composition,surface morphology,optical and electrical properties of the prepared CuAlO2 thin film were studied.The experimental results show that the film has higher crystallinity,larger grains,and better film quality when the argon-oxygen ratio is 40:10.A proper argon-oxygen ratio is conducive to film nucleation and crystallization.The UV spectrophotometer test results show that the average transmittance and optical band gap of the film are decreasing with the increase of oxygen content.The average transmittance is 69.8%at the maximum and the optical band gap is 3.59 eV when the argon-oxygen ratio is 40:10.In order to further optimize the quality of the film,we annealed the film in both air and nitrogen environments.The results show that the nitrogen environment is more conducive to film crystallization.In addition,annealing in a high-temperature environment is conducive to improving the crystal quality of the film and optimizing the visible light transmittance of the film.When the annealing temperature is 900°C,the transmittance in visible light is 68%at the maximum,and the optical band gap is 3.5 eV.3.The effects of different concentrations of Zn doping on the film phase composition,surface morphology and optical properties.Zn doping makes the the(101)(104)of CuAlO2 diffraction peak shift to a small angle and mainly exists in the form of replacing A1 atoms.As the Zn doping concentration increases,the crystallinity and average transmittance of the thin film decrease,while the optical band gap increases.the average transmittance is 57.7%at the maximum and the optical band gap is 3.66 eV when the doping concentration is 3%.