| ZnGa2O4 is a cubic wide band gap semiconductor,and it is a complex oxide with a spinel structure with high chemical stability.In this project,Zn Ga2O4 photocatalytic materials were prepared using Na3C6H5O7,Zn(NO3)2,Ga(NO3)3,Cr(NO3)3,Ni(NO3)2,Co(NO3)2,and CO(NH2)2 as raw materials.The UV-Vis DRS spectrum was used to characterize the absorption threshold of the photocatalytic material and the band gap of the material.The photocatalytic degradation test and photocatalytic hydrogen production test were used to characterize the catalytic performance of the photocatalytic material.The nano-Zn Ga2O4 photocatalytic material is prepared by hydrothermal method.When the holding time is 24 h,the hydrothermal temperature is 160 °C,and the ratio of sodium citrate to metal ion is 5:2,the size of Zn Ga2O4 material was nanometer and the size is 10 nm,the forbidden band width is 3.9 e V.The rate of degradation of rhodamine B is the fastest,the degradation rate reach 90%,and the hydrogen production of Zn Ga2O4 sample is 184.7 ?mol/g.The Zn Ga1.99Cr0.01O4 samples prepared with Cr3+ doping amount of 1.0%,calcination temperature of 700 ? and holding time of 8 h are prepared.It is a cubic phase of pure phase Zn Ga2O4,no other heterogeneous phase,the band gap of the sample is 3.28 e V,the degradation rate of rhodamine B is 90% when the light is 45 min,and the hydrogen production of Zn Ga1.99Cr0.01O4 is 446.4 ?mol/g;The forbidden band width of the Zn0.9985Ni0.0015Ga2O4 sample prepared when the amount of Ni2+ doping is 0.15%,the calcination temperature is 700 °C,and the holding time is 0.5 h.The degradation rate is96% when the light is 60 min,and the hydrogen production is Zn0.9985Ni0.0015Ga2O4 229.9?mol/g.The forbidden band width of the Zn0.998Co0.002Ga2O4 sample prepared at a Co2+doping amount of 0.2%,a calcination temperature of 700 °C and a holding time of 8 h,the degradation rate is 98% at 60 min and 558 ?mol/g at Zn0.998Co0.002Ga2O4.Figure 62;Table 2;Reference 50... |
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