Single Layer Graphene/Silica/Silicon/Multi-layer Graphene Based Infrared Enhanced Charge Coupled Device

As an important tool for human observation,image sensor technology has always been the focus of industrial and academic world.High-performance image sensors play an important role in all aspects of scientific research,production line and even daily life.Existing commercial silicon-based image sensors have problems more or less,for example,charge-coupled device(CCD)has good imaging quality but slow speed and high energy consumption;Complementary metal oxide semiconductor(CMOS)image sensor has high speed and low power consumption,but large noise brings hardness in low-light imaging.How to improve the performance of silicon-based photodetectors is an urgent problem to be solved for researchers.Graphene is a type of two-dimensional material.It is currently the thinnest but also the hardest nanomaterial in the world.It has extremely high transparency and thermal conductivity,its electron mobility exceeds 14000cm~2/V·s under room temperature.And the optical transition characteristics inside graphene can extend its light absorption range to infrared or even terahertz.Graphene has good flexibility and can be transferred onto other semiconductors in a simple way to form field effect transistors(FETs),heterojunctions and so on.Based on this,this article conducted the following research:(1)An infrared enhanced charge coupled device based on a single-layer graphene/silicon dioxide/silicon/multi-layer graphene structure is proposed.The working principle of the device is analyzed,and how the structure lift performance of silicon/graphene-based photodetector is explained.(2)An infrared enhanced charge coupled device based on a single-layer graphene/silicon dioxide/silicon/multi-layer graphene composite structure was designed and fabricated,and parameters of the device were tested.The device uses a Schottky junction formed between multiple layers of graphene and silicon to improve the IR-light absorbing of charge-coupled device and expand its detection wavelength range.(3)The driving circuit of the device is designed,and imaging test under various light bands is realized.Our device has advantages of wide spectrum,high gain,high sensitivity,simple processing,good compatibility with silicon processing technology,etc.It has extremely high application prospects and commercial value.