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Controllable Preparation And Field-effect Performance Of TTT-CN Micro-nano Structure

Posted on:2021-05-02Degree:MasterType:Thesis
Country:ChinaCandidate:J H LiuFull Text:PDF
GTID:2381330614471144Subject:Optics
Abstract/Summary:PDF Full Text Request
In recent years,in addition to the great efforts devoted into the improvement organic field-effect transistors?OFETs?performance,exploring multifunctional applications of materials through morphology-structure regulation,and so as to further analyze the mechanism of internal charge transport,etc.has gradually attracted the widespread attention of researchers.This article mainly carried out a series of work from aspects of the design and synthesis of micro-nano materials,controllable growth of crystal morphology in different dimensions,the construction of novel device structure and the exploration of optoelectronic performance.The contents are as follows:?1?One-dimensional ribbon crystals of quinone oligothiophene compounds?TTT-CN?were prepared by simple drop-casting method.And TTT-CN single-crystal field-effect transistors?FETs?based on air-gap and p-n heterojunctions were prepared.The FETs of TTT-CN single crystal exhibited electron mobility as high as 2.17 cm2V-1s-1 in air.In order to construct p-n heterojunction,anthracene derivatives?H-Type molecule?was selected as the p-type materials.The mobility of p-type single crystal transistors based on air-gap was up to 2.45 cm2V-1s-1,which matches well with the n-type transistors.Moreover,the p-n heterojunction-based FETs exhibited gate tunable and anti-ambipolar properties by combining cross-overlapped n-and p-type single crystals with the air layer.Compared with devices based on Si O2,the lower shallow trap density on the air insulating layer resulted in a smaller hysteresis effect,and the?Vpeak is effectively reduced from28.5 V to 6 V.?2?A two-dimensional TTT-CN thin film was successfully prepared by the binary solvent method.The effect of solution concentration and the force of substrates on the morphology and structure of the thin film were explored,and the field-effect performance was studied.The ultra-thin porous thin film based on Si O2 substrate shows good gas sensing performance for saturated acetone,saturated chlorobenzene and 150 ppb NH3,and the current has increased an order of magnitude or more.?3?By the solution-epitaxy method,using the water surface as the substrate,a two-dimensional TTT-CN thin film with a size in the order of millimeters was prepared on the air-solution-water interface.At different experimental temperatures,two-dimensional TTT-CN films with different thickness were grown,and the dependence of field-effect mobility and thickness was preliminary explored and discussed.Using the ice surface as the substrate?low temperature?,the one-dimensional and two-dimensional structures of TTT-CN were obtained simultaneously,and the field-effect performance was studied.
Keywords/Search Tags:Single crystal, Heterojunction, Interface defect, Filed-effect transistor, Two-dimensional thin film, Morphology control
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