Fabrication Of CIGS Semiconductor And The Study On Photoelectrochemical Properties

With the increasing requirement of energy in the modern society,researchers are still trying to find a new type of renewable energy in the substitution of non-renewable energy such as fossil energy,which was nearly dried up.According to the source of the energy,those can be classified into:Wind Energy;Hydrogen;Solar Energy;Geothermal Energy and Biomass.Solar energy has the benefit of non-pollution emission,abundant reserves and no regional restriction,which has been given attention from research organizations around the world.Solar energy originated in nuclear energy released from the sun through nuclear fusion from hydrogen to helium.Solar cell has the theoretical foundation of Photoelectric Effect,which is theory about conversion from radiant energy to electrical energy.Hydrogen energy can be obtained through Water Splitting,and electrical energy can be obtained through solar cell.Copper indium selenium?CIS?compounds with the benefit of stable performance,simple preparation technology and low production cost,has become a key direction in the compound semiconductor.Main will,CIS lattice can be modified through doping Ga in place of In element,converting to Cu(In_1-xGa_x)Se₂ structure.Band gap can be controlled from 1.02eV¹.67eV through the adjusting of the value of X.In this paper,thin film CIGS and nanowire array CIS was fabricated through spin-coating and electro-deposition.The performance in water splitting was also studied in this paper:1)CIGS compound semiconductor was fabricated through spin-coating and annealing in Se vapor,and the influence about Ga/?In+Ga?on different annealing temperature was studed.XRD results show that peaks matches well with the standard card;SEM shows the surface of the sample was dense and uniform.Ga/?In+Ga?rate was 31%³3%,and photo electrochemical experience shows significant increasement in photo-current for single layer.2)CdS layer was prepared through chemical bath deposition?CBD?,and MoS₂ layer was prepared through Spin-coating to fabricate double layers structure with CIGS.XPS was used to characterize the broader band-gap layer,and the photo-current was raised benefited in the improvement of the photon utilization from composite structure.3)CIS nano-wire array structure was fabricated through Anodic Aluminum Oxide?AAO?assisted template electro-deposition.The difference of photoelectric conversion efficiency between thin-film and nano-wire array was studied,and the result shows the latter one has stronger photocurrent density,due to lower reflectivity and shorter carrier transport distance.