| The sulfide transition metal has a special 3d electronic shell structure.Because of its special electronic structure and rich elements,it has valuable value in the applications of battery,catalytic and super capacitor.In this paper,we use the chemical bath deposition to prepare the FeS1+x precursor thin films and vulcanize to FeS2 and the?Co,Ni,Mo?xFe1-xS2thin film,and the FeS2 and FeS2@MoS2 property of photo-catalytic.Firstly,FeS1+x thin films were successfully synthesized using?NH4?2Fe?SO4?2·6H2O and CH3CSNH2 as raw materials through chemical bath deposition under 25 oC.We have adjust the process conditions:the S/Fe ratio of raw material,reaction pH,reaction temperature,deposition time and iron source to regulation the S/Fe ratio and the light absorption properties of the films.Then pyrite FeS2 thin films were obtained after sulfurizing FeS1+x precursor thin films and it has a good light absorption performance and the surface morphology of the FeS2films were composed of cubic grains,the band gap is 1.75eV.Secondly,Co doped FeS1+x thin films were successfully synthesized using?NH4?2Fe?SO4?2·6H2O,CoSO4·7H2O?Co/?Co+Fe?=10%,14%,16%and 18%?and CH3CSNH2 as raw materials through chemical bath deposition under 7080 oC.Then vulcanized the?Co,Fe?S1+x thin films.The band gap were 1.51 eV,1.47 eV,1.40 eV and1.59 eV,respectively.Thirdly,Ni doped FeS1+x thin films were successfully synthesized using?NH4?2Fe?SO4?2·6H2O,NiSO4·6H2O?Ni/?Ni+Fe?=20%,32%,50%,70%,85%and 100%?and CH3CSNH2 as raw materials through chemical bath deposition under 7080 oC.With the increase of Ni2+addition,the film resistance is decreasing.Fourthtly,Mo doped FeS1+x thin films were successfully synthesized using?NH4?2Fe?SO4?2·6H2O,MoO3?Mo/?Mo+Fe?=20%,32%,50%,70%,85%and 100%??NH4?6Mo7O24?4H2O and CH3CSNH2 as raw materials through chemical bath deposition under 7080 oC.The visible light absorption range was from 200400nm to 400750nm.The MoS2@FeS2 by hydrothermal preparation. |
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