| In the development of optoelectronic materials,infrared transparent conductive films,as a new material that can transmit light in the infrared band and have good electrical conductivity,have been widely used in aerospace,defense engineering,photoelectric sensing technology,battery energy,etc.In high-tech industries,such as infrared imagers,infrared thermal analyzers,aerospace missile windows,aerospace photoelectric systems,infrared electrode batteries,etc.Until now,the focus of research at home and abroad is still on thin film materials in the visible and near-infrared bands.Because of its extremely high plasma oscillation frequency?p,the cut-off wavelength does not extend beyond the mid-infrared or far-infrared bands,so high-performance infrared transparent conductive The film is of profound significance to the national economy and people's livelihood.The metal oxide thin film material can improve the photoelectric properties of the thin film through a certain doping,and can have a wide band gap,and the plasma frequency can be extended to the mid-infrared.TCO films with excellent properties have been obtained in visible light and near-infrared,but there are few studies in the mid-infrared band.In this paper,static mid-infrared transparent conductive W-doped In2O3 films,ZnO films,CuCrO2 films,and IWO/Cu/IWO composite films were prepared by magnetron sputtering method,and their photoelectric properties were studied and analyzed.The main work of this article is as follows:?1?IWO films were prepared by RF magnetron sputtering.The effects of different sputtering powers and annealing temperatures on the structure,optical and electrical properties of IWO films were studied.It is found through research that the optical and electrical properties of IWO thin films are affected by the annealing temperature of the thin film,and the crystallinity of the thin film is continuously improved with the increase of the annealing temperature.It has a preferential growth of?222?crystal orientation.When the annealing temperature is 150?,The transmittance of IWO film is the highest,reaching 75%.When the annealing temperature is 150?,the transmittance of IWO film is the highest,reaching 75%.When the annealing temperature is 350?,the XRD diffraction peak intensity of the film is the strongest.The crystallinity is the best,and the resistivity of the film is the best,reaching 9.82×10-3?·cm,but the average transmittance in the infrared band of2.5-4.5?m is only 65%.At the same time,the photoelectric properties of the IWO film are closely related to the power of the thin film sputtering.With the increase of the power,the electrical properties of the film are gradually improved.When the sputtering power is 30W,the resistivity of the film is 6.04×10-2?·cm,the transmittance is 69%.?2?IWO/Cu/IWO multilayer films were deposited on a quartz substrate by RF magnetron sputtering and DC magnetron sputtering,and a low resistivity film structure was obtained.In the case of the same IWO film,the conductivity of the multilayer film mainly depends on the thickness of the intermediate Cu layer.The optimized film resistance is as low as 4.5×10-4?·cm.The transmission of the film is greatly affected by the thickness of the Cu layer.Increasing the layer thickness The transmission of the film first showed a slight upward trend and then decreased rapidly.When the thickness of the Cu layer was 4nm,the maximum transmittance in the infrared region of the film could reach 72%,but the average transmittance was less than 60%.?3?The CuCrO2 ceramic target was sputtered by RF magnetron sputtering,and a CuCrO2 thin film was deposited on a sapphire substrate.The effect of the surface morphology,optical and electrical properties of the CuCrO2 thin film on the negative bias was studied.The bias affects the growth of the film.When the negative bias is increased,the number of crystal grains of the film increases significantly,and the grain size also becomes larger.A high negative bias can make the particles have enough energy to remove on the surface of the film.To make the film more dense and uniform,and the crystallinity is also better,the electrical performance of CuCrO2 film is gradually improved.When the negative bias voltage is-15V,the electrical performance of the film is the best,reaching 0.28?·cm.At this time,the CuCrO2 film The average infrared transmittance reaches 2.5%at 2.5?m-5?m.The ZnO film was prepared on a quartz substrate,and the relationship between the O2 flow rate and the resistivity and optical transmittance of the ZnO film was studied.The resistivity of ZnO thin film increases with the increase of O2 flow rate.When the O2 flow rate is 0.4 sccm,the resistivity of the ZnO film reaches a maximum of 6.9×10-2?·cm.When the O2 flow rate is 0 and 0.2 sccm,ZnO The transmittance of the film has not changed much.When the O2 flow rate is 0.4 sccm,the average transmittance of the ZnO film in the 2.5?m-5?m band is the smallest,and the average transmittance is less than 80%.?4?ZnO film and Cu film were deposited on the quartz substrate by RF magnetron sputtering and DC magnetron sputtering,respectively.By adjusting the annealing temperature of the ZnO layer thin film,the IV characteristics of the Cu/ZnO Schottky junction were studied.When the thickness of the thin film is increased,and the ZnO thin film is deposited and annealed first,the crystalline state of the semiconductor layer is ensured,and the crystallinity is better,so that the interface layer can be more matched.After the ZnO layer thin film is annealed at 380?,the resulting ZnO/Cu Schottky The turn-on voltage of the junction is approximately 2.5V.A p-CuCrO2/n-ZnO heterogeneous pn junction thin film diode was fabricated on a quartz substrate using radio frequency magnetron sputtering technology.By varying the substrate temperature during the deposition of n-ZnO thin films,a simple comparison of different substrate temperature depositions was studied.The effect of n-ZnO thin film on the IV characteristics of heterogeneous pn junction.When the substrate temperature is as high as 380?,the rectification effect of p-CuCrO2/n-ZnO junction diode is obvious,and the forward turn-on voltage of the diode is 2.6V. |
PDF Full Text Request