Study On Preparation Method And Device Design Of Black Silicon

As more and more electronic products are used,people's pursuit of energy products is also more and more consideration of green,smart,light,low cost and other factors.Among the numerous photovoltaic devices,silicon devices occupy the main market with the advantages of abundant silicon element,high device integration and relatively low price.According to its own characteristics and market demand,the development route of flexible film is formulated for crystalline silicon photovoltaic devices,in an attempt to reduce the consumption of raw materials and improve its own performance to balance economic output and production costs.In this paper,the thickness of silicon photovoltaic cells is reduced,and the corresponding experiments and researches are carried out.The main work content is:1,The three processes of alkaline etching,electrochemical etching and self-developed thin film acid etching were used to process the microstructural silicon,and the influence of the parameters changes in the etching process on the structure morphology was investigated.The structure etched by alkaline method is pyramidal,the structure shaped like hole is processed by electrochemical etched process,the shape etched by thin film acid method is related to the selection of substrate,the structure etched by thin film deposited on the glass is a composite structure with holes and cracks existing at the same time,and the structure processed by flexible polyimide material is a crack.2,Contrast pyramid black silicon structure with multiple pass the spectral characteristics of black silicon structure,the results show that the pyramid structure can greatly reduce the reflectance of planar silicon,the porous structure of black silicon is more fit back according to the type of device structure,can be more effective in reducing device transmittance,showing different black silicon morphology on the spectral characteristics of different effects.3,Two kinds of flexible black silicon films were designed.First,the single crystal silicon film was reduced to a flexible film by chemical thinning method,and the structure of the black silicon was processed by electrochemical etching method.The flexible single crystal black silicon films with good morphology were successfully prepared.The second is to deposit crystalline silicon film on the polyimide flexible substrate by magnetron sputtering deposition to produce a flexible crystalline silicon film with good mechanical strength.Finally,the microstructure is processed by the thin film acid etching process explored in the experiment.4,By means of simulation,a simulation model was established based on experimental data to explore the influence of black silicon structure on the spectral characteristics of ultra-thin silicon films.On the basis of this,combining with the light capture theory,a light capture structure of gradual grating is proposed.5,Based on the experimental results and simulation methods,a 3 micron thick thin-film crystalline silicon solar cell structure was proposed.At the same time,the photoelectric conversion efficiency is 17.8%,the short-circuit current is 32.5ma /cm-2,the open-circuit voltage is 0.65 v,the maximum output power is 17.14mw/cm-2,and the filling factor is 80.73% of the 3-micron thick thin-film crystalline silicon solar cell.