| Antimony sulfide(Sb2S3)is a direct bandgap semiconductor with a simple layered structure.It has a suitable band gap(1.7e V),a low phase formation temperature,a high absorption coefficient and environment friendly et al.It is considered to be a very promising material for solar cells.In this paper,N-butyl dithiocarbamic acid was synthesized by addition reaction of carbon disulfide with n-butylamine,then reaction with the antimony oxides to generate Sb-butyldithiocarbamate complex,then the Sb2S3 thin films were prepared by pyrolysis method.The influence of solvent in precursor solution,pyrolysis temperature and spin-coating pyrolysis process parameters on the morphology,crystal phase,optical absorption and chemical composition of Sb2S3 thin films were systematically compared,and the performance of the corresponding solar cells were evaluated.(1)Crystalline Sb2S3 thin films were successfully prepared by the pyrolysis method at 200?for 30min using DMF as the solvent,and the corresponding solar cells were assembled using spiro-OMe TAD as the hole transport material.The effects of chemical composition,crystal phase,crystallinity,morphology,optical absorption and the photovoltaic performance of crystalline Sb2S3 thin films were prepared at 200?.The results showed that the crystalline Sb2S3 thin films with the preferential orientation of(020),and the surface of the Sb2S3 thin films were flat and smooth,and there were some holes on the surface with a few of 10-30 nm pinholes,the spiro-OMe TAD could not penetrate into these pinholes The photoelectric conversion efficiency of the Sb2S3 thin film solar cells achieved 5.44%with the open-circuit voltage was 0.62 V,short-circuit current density was 14.60 m A·cm-2 and fill factor was 60.16%.(2)The crystalline Sb2S3 thin films were also prepared at a low temperature of 200?using Et OH as the solvent,and the corresponding solar cells were assembled using spiro-OMe TAD as the hole transport material.The influence of chemical composition,crystal phase,crystallinity,morphology,optical absorption and the photovoltaic performance of the corresponding solar cells were studied.The results showed that the crystalline Sb2S3thin films with the preferential orientation of(020),and these thin films were porous with a few of 10-30 nm pinholes.The photoelectric conversion efficiency of the Sb2S3 thin film solar cells achieved 5.00%with the open-circuit voltage was 0.60 V,short-circuit current density was 15.37 m A·cm-2 and fill factor was 54.57%.(3)By using ethanol as solvent,and then adjusted the spin-coating parameters and the pyrolysis temperature to obtain the dense and full-coverage Sb2S3 thin films.The specific operation is as follows:firstly,the parameters of acceleration were improved to7000 rpm/s,and then the annealing process were divided into two steps.The pyrolysis temperature of the first step were at 160?for 30 min to prepared the porous and amorphous Sb2S3 thin films,and then converted to the full-coverage and crystalline Sb2S3thin films at 300?for 2min.And the spiro-OMe TAD was used as the hole transport material for assembling the corresponding solar cells.The Sb2S3 thin film solar cells achieved the photoelectric conversion efficiency of 5.28%.Then the P3HT was introduced into spiro-OMe TAD solutions,the hole mobility was calculated by the space charge limited current method to be 1.50×10-4 cm2·V-1·s-1 for spiro-OMe TAD and3.42×10-4 cm2·V-1·s-1 for spiro-OMe TAD:P3HT.By combination of the dense and full-coverage Sb2S3 thin films and spiro-OMe TAD:P3HT hybrid hole transporting materials for efficient solar cells,the photoelectric conversion efficiency of the corresponding solar cell was increased from 5.28%to 5.65%. |
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