Research On The Intercalation Of Two Dimensional MoO₃ And Its Photoelectric Characteristics

Two-dimensional?2D?materials are widely used in different fields because of their unique physical and chemical properties.It is a research hotspot to use different methods to regulate their intrinsic properties.Intercalation is considered as an effective strategy.Spatial control,or even direct patterning,of ions is widely required for practical device fabrication and integration,but some mainstream intercalation method are difficult to achieve without the support of complex technology.Based on this,the research focus of this paper is to explore a universal method to implement location intercalation and applied to the device manufacturing process.The specific research results include the following three parts:?1?Based on 2D?-Mo O₃ material system put forward new ion intercalated method,through the micron grade metal Zn particles in surface of Mo O₃ and immerse in Co ion salt solution.Through a series of characterization methods,it is proved that the intercalation causes the changes of Mo O₃ structure and photoelectric characteristics.The method is further improved to realize positioning intercalation.By studying the relationship between the types of metal particles and the concentration of solution on the intercalation rate,it is proved that the internal mechanism of the intercalation method is derived from the protocell model.Therefore,the method is successfully extended to other material system?Mo S₂?WS₂?Mo Se₂?WSe₂?graphene?and other metal salt ions(Cu²⁺?Sn⁴⁺).?2?Positioning ion intercalated method was applied to device manufacture,in a same Mo O₃ nanosheet,Different kinds of intercalations were implemented in different regions of a single Mo O₃ nanometer sheet,including single ion intercalated and multiple ion intercalated,the results show that multiple ion intercalated channel device relative to the other channel device show highlights responsivity(3.2 AW^-1),in combination with theoretical calculation proved to improve the performance of photoelectric derived from the mechanism of coordination enhancement effect.?3?Based on the positioning intercalation method,the intercalation degree was further studied,and H ion intercalation was selected.Based on this,four kinds of different properties of field effect transistors were prepared on a single nanometer,including all-area intercalation channel and intrinsic/intercalation heterojunction channel.The output curve shows that heterojunction devices show obvious modulation effect,among which heterojunction devices with low intercalation degree have the best effect.