Effect Of Interface Modification On The Performance Of Inverse Polymer Solar Cells

Organic polymer solar cells have the advantages of low cost,simple preparation technology and light quality,which can be made into flexible devices and can be produced in large area.Organic solar cells are still in the development stage.The factors that restrict the performance of the battery include the efficiency and stability of the devices.At present,the focus of the research mainly includes two aspects,the synthesis of the receptor materials and the interface modification.The interface modification layer is mainly located between the active layer and the battery electrode,which mainly affects the transfer of the carrier.And the collection process of the carrier by the electrode.In this paper,the interface modification method is used to improve the performance of the device,and the interface modification is used to explore the reasons for the light soaking effect produced by the metal oxide as a device of the electron transport layer.First,an organic small molecule material Bathocuproine(BCP)used as a hole barrier in a positive polymer solar cell is introduced into the inverse type device structure.It is found that the open circuit voltage and short circuit current of the device are low,and the JV curve of the device exhibited an anomalous J-V curve with a kink shape after ozone treatment.the device performance has a large drop.Therefore,we add the electronic transport layer Zinc Oxide(ZnO)in this structure.BCP is applied to the top or lower of the ZnO layer,and the performance of the devices compared with only BCP or ZnO has a certain increase.BCP and ZnO are mixed to get the mixed solution.In the P3HT:PC61BM system,ZnO and BCP are mixed with 1:0.5 volume ratio,and the performance of the device is the best,mainly because the filling factor has been greatly improved.Compared with the ZnO device,the fill factor is increased by 17%,and the device is 43%higher than that of BCP.And after the ozone treatment,the stability of the device is good.The light soaking effect appears in the reverse device using the metal oxide(tin oxide(SnO2))as the electron transport layer,and this phenomenon will be restored to the initial state under the dark light condition.In the measurement of the capacitance voltage characteristics,the capacitance voltage curve is changed with the change of the light time,light soaking phenomenon is caused by changes in capacitance inside the device.The interface modification was used to modify the two interfaces of ITO electrode with metal oxide and metal oxide and active layer.It was found that the interface between ITO electrode and metal oxide was not the main cause of light soaking,but the interface between active layer and metal oxide has greater effect on it.