Performance Optimization Of Perovskite Solar Cells And Improved FF In Devices With Zirconium(?) Acetylacetonate

The emergence of organic-inorganic hybrid perovskite solar cells is a major scientific breakthrough in the field of photovoltaics in recent years.At present,the photoelectric conversion efficiency has reached 22.7%.However,a very important factor restricting its commercial production is the poor stability of the device.Perovskite solar cells are prone to degradation in water and oxygen environments and under high temperature and light conditions.This work is based on an inverted planar structured perovskite solar cell,improved the photoelectric conversion efficiency of device by optimizing the device structure and manufacturing process,and improved the FF,PCE and stability of device by using a buffer zirconium acetate ZrAcac as a hole-ion-blocking layer.In this work,the fabrication structure and processing method of the hole transport layer,the perovskite active layer and the electron transport layer/buffer layer were respectively explored.The use of CuSCN and NiOx as the hole-transport layer has improved the device performance compared to PEDOT:PSS;the three polar solvents DMF,DMSO,and GBL commonly used in the precursor are mixed together and a suitable ratio is found,when DMF:DMSO:GBL=4:4:2,the device shows a best performance;In addition,by incorporating Cl element in the active layer,the device performance has been improved and related analysis has been performed;the performance of the Au-PSC and Ag-PSC was compared,and it was found that Au has a certain effect on increasing the FF and stability of the device.Finally,the exploration of the electron transport layer has been carried out,and the low-solubility fullerene C60 has been incorporated into the PCBM in a certain proportion,effectively increased the current and efficiency of the device;We compared the current-voltage performance of several commonly used buffer layers and used the most excellent BCP in the device based on CuI hole transport layer,so the device efficiency has been great improved.In this work,we used a buffer layer zirconium acetate ZrAcac spin-coated on PCBM and the FF and PCE of the device was increased from?68%to?79%and from?14%to?17%.ZrAcac has a lower VB level as measured by UV photoelectron spectroscopy,indicating that it can block the hole diffusion and reduce the carrier recombination.Through surface morphological characterization and measurement of surface chemical element content,it was found that I,MA and Pb elements can diffuse from the perovskite through the PCBM layer to destroy device performance.ZrAcac molecules can fill the pinholes in the PCBM layer to effectively block the diffusion of perovskite ions/molecules in the PCBM layer.The test results show that the PCBM/ZrAcac layer can reduce the interface charge accumulation and reduce the leakage current,thus improving the FF and PCE of device.