Structure-dependent Performance Of Antimony-based Infrared Photovoltaic Cell

The infrared photovoltaic cells,converting the infrared thermal radiation into electric power,have important research value in the fields of thermphotovoltaictechnologyandfullspectralsolarphotovoltaic technology.In this work,by using the antimony based semiconductor alloy which is lattice-matched with the Ga Sb substrate as the infrared photovoltaic cell material,we have systematically investigated the structure andperformancecharacteristicsoftheantimony-basedinfrared photovoltaiccellsundertheapplicationenvironmentofthe thermophotovoltaic.Specifically,a series of positive research results have been achieved on the researches of Ga_x In_1-x-x As_y Sb_1-y-y cell bandgap-dependent structureandperformancecharacteristics,In As_0.91Sb_0.09celland GaIn AsSb?0.53 eV?/In As_0.91Sb_0.09.09 double junction cell structure performance and other subject research.The summary is as follows:1)The investigations of structure and performance of 0.50-0.60 eV GaInAs Sb infrared photovoltaic cells.The results show that the cell with N⁺/P structure had the highest conversion efficiency,and the optimal doping profiles of the cell should be controlled at N_d=10¹⁸ cm^-3,N_a=4×10¹⁷ cm^-3,which is insensitive with radiation temperature and material band gap.Moreover,the band gap and radiation spectrum related device simulation shows that the structure of the optimal Ga_xIn_1-x-x As_ySb_1-y-y cell is less affected with the surface reflection of the material,while the conversion efficiency and output power of the cell will be reduced by more than 33%.In the end,the best structure and corresponding photoelectric properties of cell,such as maximum conversion efficiency,open-circuit voltage,short-circuit current density have been synthesized for the quadratic equations of band gap,and the fitting parameters form the equation can also be expressed as a function of radiation temperature.2)The investigation of thermal radiation conversion performance for InAs_0.91Sb_0.09.09 infrared photovoltaic cell.The results show that the optimal doping concentration of the InAs_0.91Sb_0.09.09 cell is N_d=10¹⁸ cm^-3,N_a=10¹⁷ cm^-3.Comparing to0.53 eV GaIn AsSb cell,InAs_0.91Sb_0.09.09 infrared photovoltaic cell has higher thermal-electric conversion efficiency in the low-temperature radiation range of800-1500 K.Besides,the effect of series resistance for cell performances under low temperature radiation is negligible.Last,the optimal structure of N-type quasi-neutral region thickness are 0?m,and the change of the thickness of the base region with the thermal radiation spectrum obeys the cubic polynomial function,in which affirms the application potential of the Schottky type cell structure in the thermophotovoltaic technology.3)We have designed and studied the structure-dependent conversion performance of the GaInAsSb?0.53 eV?/In As_0.91Sb_0.09.09 double junction infrared photovoltaic cell.The results indicate that the optimal doping concentration of the top cell is N_d?a?=9¹0?3.5⁴?×10¹⁷ cm^-3,while the optimal doping concentration of bottom cell is N_d?a?=10?1?×10¹⁷ cm^-3.In addition,under the irradiation of blackbody radiation in the range of 1000²000 K,the performance of the double junction cell is always superior to the single junction GaIn As Sb cell,and the efficiency is increased by about30%⁴0%.