Design Of Silicon Carbide Type Interleaved Boost DC/DC Converter

The Silicon carbide(Si C)MOSFET and schottky diode which are composed of 3rd bandgap semiconductor materials,are gaining more and more attentions due to its superior characters.Among them,Si C schottky diode has been widely used in communication power supply.In recent years,Si C MOSFET can be frequently seen in new energy area,especially in PV and EV charger which ha ve high frequency and efficiency requirements,it’s getting more and more acceptance among the researchers.Due to the big difference between Si C and silicon material,Si C component and silicon component have obvious differences.We can take fully advantage of Si C component on the basis of well understand of it.This paper designs and takes advantage of Si C interleaved Boost converter.By analyzing the static and dynamic characters of Si C components,indicating its superiority of improving systems efficienc y and lower systems volume.By analyzing the equivalent circuit of silicon carbide MOSFET,the method of improving resonant problem are given.Adjust gate resister and capacitor value can solve high frequency and bridge cross interference issue.Design positive and negative driver circuit to solve the silicon carbide MOSFET susceptible interference issue,control method are posive and negative power supplies driver,single power supply with positive and negative voltage driver and also active clamp driver.Analyze the operation theory of interleaved Boost circuit,verify its advantage of decreasing current ripple and inductor size.Expand the switching sequence,by overall consideing parasitic parameters and miller effect,build Si C MOSFET power loss model with Mathcad software,finnaly improve the accuracy of full load systems efficiency.Analyze the control circuit,design compensation network,import PSpice model of Si C components,use SImetrix simulation software to simulate the open loop and close loop operation characters.Finaly design experiment system and debug,measure the systems efficiency and capture switching stress waveforms,compare simulation and actual test results,point out the errors or deficiencies.