Research On High Frequency Inverter Based On Silicon Carbide MOSFET

Due to their excellent material properties,silicon carbide devices exhibit unique advantages in temperature and voltage resistance,high power density and high frequency performance.At the same time,silicon devices widely used in power electronics have some inevitable disadvantages due to their inherent material characteristics,such as low efficiency,poor high-frequency characteristics and low power density.In order to solve the above problems,new switching devices are used to improve the existing shortcomings of inverters.According to the above requirements,this article will use silicon carbide MOSFET in high frequency voltage type three-phase inverter,by using Pspice software Co-Simulation with MATLAB,to complete the double pulse platform structures,dynamic and static characteristics of silicon carbide power MOSFET device is studied,The difference of efficiency improvement in voltage type three-phase inverter between silicon carbide MOSFET device and silicon IGBT device and silicon MOSFET device is also compared.The main work and research results of this paper are as follows:Firstly,the dynamic and static performances of silicon carbide MOSFET and silicon carbide schottky diode are simulated by Pspice simulation software.Compared with traditional Si devices.It shows the advantages of Si C MOSFET in switching performance and high frequency application.The topology and control mode of inverter main circuit are introduced in detail.A special driving circuit is designed according to the dynamic performance of silicon carbide MOSFET.And through simulation experiments to verify that the high level +18V,low level 0V drive pulse,in line with the SCT3022 KL drive requirements.At the same time,the overcurrent protection in the drive circuit is simulated and analyzed.When the over-current occurs,the drain protection current corresponding to different junction temperatures is simulated and analyzed,and the feasibility of the over-current protection is finally verified.Finally through the form of Co-Simulation set the output voltage is 140 v,output power for 20 kw full silicon carbide power module,analyzing efficiency under different load and switching frequency,and with high speed silicon IGBT device and silicon MOSFET device under the same load efficiency of different switching frequency comparison,it is concluded that silicon carbide MOSFET’s switching loss is smaller under different conditions,the conversion efficiency of silicon carbide MOSFET inverter is higher than silicon IGBT devices and silicon MOSFET inverter is about 1% ～ 3.1%.