Preparation Of Sb₂Se₃ Thin Film By Sol-gel Selenization Method And Its Application In Solar Cell

With the constant progress of society,the demand of all sectors of society for renewable energy is growing.Scientific workers devoted a great deal of energy to the photovoltaic industry and devoted themselves to the exploration of renewable and new energies.The photovoltaic solar cells have been rapidly developed.As a direct band gap P-type semiconductor material,Sb₂Se₃ thin film solar cell has the advantages of suitable forbidden band width,high optical absorption,low cost and low toxicity of materials used and the like,and has broad application prospect in the novel solar cell industry.Based on this,this paper presents a preparation method of Sb₂Se₃ thin film with low toxicity and simple operation.Through the exploration of the basic process,the influence of different Sb₂Se₃ thin films on the morphology,phase structure and photocurrent of the films has been studied.Sb₂Se₃ thin film solar cells were prepared by using the best process parameters and a certain conversion efficiency was achieved.The effects of substrate and precursor film selection on the phase structure and morphology of Sb₂Se₃ thin films were explored.SEM analysis shows that Sb₂Se₃ thin films on ITO glass are compact and uniform.Sb₂Se₃ thin films prepared on Mo glass have many micropores,and the films are easy to peel and crack.So ITO glass is chosen as the substrate material.The XRD,Raman,SEM and EDS results show that the Sb₂Se₃ thin films prepared by selenide precursor Sb₂S₃ have better crystalline quality and more stable phase structure.The effects of sol-gel processing parameters,including the concentration of antimony acetate,the molar ratio between antimony acetate,thiourea and ethanolamine,and the spin-coating numbers on the crystalline quality and phase structural properties of Sb₂Se₃ thin films were explored.The XRD,Raman,SEM and EDS results showed that when the molar ratio of antimony acetate,thiourea and ethanolamine was 1:2:6,the concentration of antimony acetate was 0.7 mol/L and the spin-coating number was 4 times respectively,Sb₂Se₃ thin film showed dense and uniform morphology and good crystalline quality with no impurity phases.The thickness of the Sb₂Se₃ film was about 2?m which was measured by using the step profiler.In addition,the composition changes of the sol-gel had little influence on the impurity phase of Sb₂Se₃ film,but had a great influence on the crystallinity and surface morphology of the film.The effects of heat treatment processing parameters,including pre-heating treatment temperatures,selenization temperature and selenization time,on the morphological,structural and photocurrent properties of Sb₂Se₃ thin films were explored.The XRD,Raman,SEM,EDS,UV and light-response curves results showed that when the pre-treatment temperature is 280?,the spin-coating number is 4 times,the selenization temperature is 400?and the selenization time is 60 min respectively,Sb₂Se₃ thin films exhibited the largest grain size,dense and uniform surface morphology,non-impurity phase,a band gap of 1.3 e V,and a photocurrent density of 2.4×10^-5A/cm².The Sb₂Se₃ thin-film solar cell was prepared according a structure of Sb₂Se₃/Cd S under the optimum processing parameters,and the power conversion efficiency???of the cell was 0.41%,with a short-circuit current density(J_sc)of2.8 m A·cm²,an open circuit voltage(V_oc)of 450 mV and a fill factor?FF? of 32.54%.