Research Of Rectification Efficiency Improvement In Microwave Energy Transmission System

The microwave wireless energy transmission system is composed of a receiving antenna,a matching circuit and a rectifying circuit.It is a power transmission system that breaks through the limitation of the transmission line,and is helpful for handling power supply problems of devices in complex scenes,and has a very large application prospect.Energy conversion efficiency is an important technical index for evaluating microwave wireless energy transmission systems.It can improve the overall total energy conversion efficiency by improving the conversion efficiency of different components of the system and reducing the consumption.Therefore,this paper focuses on the research and design of the receiving part of the core device,optimizes the material physical parameters of the device and the geometric structure parameters,aiming to improve the energy conversion efficiency.In order to improve energy conversion efficiency,the paper completed the construction of high-energy conversion efficiency microwave wireless energy transmission system by optimizing the design of energy conversion key device Schottky diode.The research results obtained in the thesis are as follows:?1?Using the ADS simulation tool,the relationship between the electrical parameters of the Schottky diode and the energy conversion efficiency is obtained by adjusting the SPICE parameters of the Schottky diode:as the series resistance of the Schottky diode increases,the zero offset capacitance increases,the energy conversion efficiency decreases;as its reverse breakdown voltage increases,its rectification range increases.The optimal design principle is proposed,which lays a theoretical foundation for the subsequent optimization of high-energy conversion efficiency rectifier devices.?2?Based on the principle of diode rectification and the theoretical basis obtained in simulation,it can be known that reducing the zero offset capacitance is the key point to improve the energy conversion efficiency.According to the principle of semiconductor devices and diodes,in this paper,a theoretical model of Schottky diode in GeSn folding space charge area on insulating layer is presented.The device simulation tool Silvaco is used to adjust the material physical parameters of the device and the geometrical structure parameters.The partially depleted GeSnOI and the fully depleted GeSnOI folded space charge region are studied,and we obtain the capacitance variation law of the special diode.The device structure of the fully depleted GeSnOI folded space charge region Schottky diode is obtained:layer doping 3×10¹⁷-7×10¹77 cm^-3,buffer doping 2×10²00 cm^-3,the thickness of the folded area is 0.1?m.Compared with the traditional Ge Schottky diode structure,the folded space charge region Schottky diode optimized the junction capacitance;?3?Using the HFSS simulation tool,design the microstrip rectenna at 2.45GHz,and get S11 is-23.9dB at 2.45GHz;use the ADS simulation tool to design the Butterworth input lowpass filter with the frequency of 2.45 GHz,the simulation results show that the reflection coefficient tends to zero in the cut-off frequency band;the ADS simulation tool is used to design the rectifier circult to complete the microwave wireless energy system by fully depleted GeSnOI SBD in?2?.The results show that with the key rectifying device designed in this paper,the energy conversion efficiency is 73.8%,and the energy conversion efficiency can be increased by 4.7%compared with the commonly used Ge Schottky diode.The research work of SPICE parameters and energy conversion efficiency of Schottky diodes and the design of GeSnOI folded space charge region Schottky diodes provide an important technical reference for improving the energy conversion efficiency of microwave wireless energy transmission systems.