Study On ?-ray Ionizing Radiation Effect Of Bipolar Transistors With Different Structures

Bipolar transistors have wide application prospects in space and spacecraft systems due to their excellent characteristics.Since the sensitivity of ionizing radiation damage to bipolar transistors is affected by factors such as different polarities and different structures,it is of great significance to study the effects of ionizing radiation damage on LPNP transistors with different structures and NPN transistors with different structures.This paper takes LPNP type(lateral PNP type transistor)and NPN type bipolar transistor as the research object,uses 60Co-?rays as the irradiation source,combined with the semiconductor simulation simulation technology,uses 4200 semiconductor parameter tester and Silvaco-TCAD simulation simulation package,Test key electrical performance parameters and defect simulations separately to reveal the influence of different emitter size,different emitter perimeter area ratio(P/A)and different base width on the electrical performance degradation of LPNP and NPN bipolar devices and Study on irradiation defect mechanism.According to the experimental data,the lower the emitter size of the LPNP bipolar device and the NPN bipolar device after 60Co-y ray irradiation,the smaller the transistor emitter size,the greater the degradation of electrical performance;the greater the ratio of the emitter perimeter area of the transistor At this time,the greater the degradation of electrical performance;the greater the width of the base region of the transistor,the greater the degradation of electrical performance.For LPNP-type transistors,the main influencing factors of ionizing radiation damage are the emitter size and base width;for NPN-type transistors,the main influencing factors of ionizing radiation damage are the emitter perimeter area ratio;and LPNP type Transistors are more affected by 60Co-y ray irradiation than NPN transistors.In order to reveal the ionization damage mechanism of 60Co-? ray irradiated bipolar devices,a defect evolution model was established in this paper for numerical simulation analysis.The numerical simulation of the ionization damage effect of LPNP transistors and NPN transistors is accomplished using the semiconductor device simulation simulation tool Silvaco-TCAD.First,the three-dimensional device models of LPNP transistors and NPN transistors are established in the Silvaco-TCAD semiconductor simulation software.On this basis,the ionization radiation defect energy level model was introduced to numerically simulate the 60Co-? ionization damage effect of LPNP transistors and NPN transistors,and the Gummel curve simulation of LPNP transistors and NPN transistors was obtained.the result of.Through comprehensive comparative analysis of the test results of the transistor before and after irradiation and the simulation results of Silvaco-TCAD simulation,it is found that the laws obtained by the defect physical model established in this paper are basically consistent with the results of the irradiation test.