Research Of The Ionizing Radiation Of Different Passivating Layer In Voltage Regulator

With the development of nuclear and space technology,more and more electronicsystems are used in the radiation environment. Radiation environment has great effecton electronic systems which used in the radiation environment, the reliability ofsemiconductor devices and integrated circuits will fail and systems cannot worknormally. Linear regulator has advantages of the good voltage regulationperformance, the small output ripple voltage, small size, low weight, low cost andso on.It is used in the space environment and will be affected by the radiationenvironment. This article studied that the radiation effect of linear regulator andbipolar transistors, and the main content of the article include:1. The principles and circuit configuration of linear regulator are researched,and thesamples are maked.2.The experimental scheme of ionization radiation and anneal are projected on thebasis of the radiation effect of linear regulator and bipolar transistors.3.The research of ionization radiation of the bipolar transistors demonstrate that thecurrent gain will decline and leak current wil increase.4. Passivation technology on the integrated voltage and bipolar transistor is studied,and find that the bipolar transistor which have the passive film of BPSG have theenough capacity to conquer ionization radiation and the reason is that the passive filmof BPSG can absorb the Na+which belong to the the passive film of SiO2.5. With the aid of Silvaco,the simulation of ionization radiation on bipolar transistoris studied, and the irradiation damage mechanisms are further verified.6. The annealing experiments under the same temperature and same time forirradiated bipolar transistors are performed, and the irradiation damage mechanismsare further analyzed.