Development Of High-efficiency Spaceborne DC-DC Converter Based On Gallium Nitride Devices

Satellite payload refers to the functional electronic products in the satellites.It mainly includes receiver,transmitter,amplifier,beacon machine,modulator,frequency converter.Due to the high overall power supply voltage of the satellite platform,each individual machine needs different electricity.Therefore,each single machine and system contains its own power module.In the face of most 5V,12 V and other low voltage supply demand,DC-DC buck switching power supply is commonly used.In recent years,with the rapid development of semiconductor materials and technology,all kinds of loads are developing towa Rds the direction of miniaturization and lightweight.Switching power supply has been near the bottleneck in the long-term technical development,engineers expect to seek breakthroughs from new components.In many of the products used by the switch power supply device,silicon-based semiconductor device is the most widely used.Due to the silicon devices limit the performance of successive approximation,find alternatives has gradually become the important direction to improve the power density.Gallium nitride devices have wider bandgaps than silicon-based devices,so they can withstand higher voltages than silicon and have better conductivity.Gallium nitride devices will be more efficient than siliconbased switching devices at the same volume.At the same time,compared with siliconbased devices,gallium nitride devices are more capable of working in high temperature environment,which enables them to be more flexible in complex environment design and save costs.However,it is for the materials properties of gallium nitride and silicon have very big distinction,in traditional circuit design based on silicon,direct replacement of gallium nitride is not reality.So it is necessary to study the working mode of gallium nitride device from the characteristics of materials,and redesign the relevant circuit,so as to give full play to the advantages of new components and form reliable application products.In this essay,it is studied from the characteristics of gallium nitride(Ga N)power devices.Studies the performance characteristics of gallium nitride(Ga N)power devices,and analyzes the advantages and application difficulties of Ga N power devices by comparing with traditional power devices.At the same time,working on the characteristics of Dc-Dc converters in various on-board switching power,analyzing the advantages and disadvantages of the existing topological structures to find the topological structures to the Ga N power devices.Finally,according to the actual engineering requirements,the design and manufacture of the selected scheme of the Dc-Dc converter.Verify the solution by comparing the efficiency of switching power supply with traditional power devices in the full load range.Al last,analyze of the prototype of the engineering from the circuit debugging and test results,research on improved actual effect of gallium nitride(Ga N)power device.Summarize the full text,to improve the circuit performance in the future work.