Research On Behavioral Modeling Method For Digital Integrated Circuits Based On IBIS

In recent years,with the development of the aerospace industry and the nuclear industry,the total dose radiation damage of electronic devices in the radiation environment becomes increasingly prominent.The extensive application of digital devices in modern electronic devices has made the research on radiation hardening of digital integrated circuits increasingly important.The traditional radiation hardening techniques usually adopt the “design-manufacturing-testing” iterative approach,which is time-consuming and laborious.With the rapid development of computer industry and the rise of computer simulation technology,it is expected that the traditional radiation hardening techniques can be replaced by the method of the computer simulation,which has the ability of saving manpower,material and financial resources to the maximum extent.In order to simulate the radiation effects of digital circuit system,it is necessary to obtain the radiation effect model of the components in the digital circuit system.At present,the total dose effect model proposed for digital devices mostly depends on the specific technology of the device.The model is complex and the calculation cost involved in the model is high.Also,this model has shortcomings in the face of large-scale integrated circuit simulation.Given this,this paper hopes to propose a general behavior-level modeling method for digital integrated circuits to improve the universality of the model,simplify the construction process of the model,and reduce the computational cost of the simulation.Specifically,this paper has down the following work.First of all,based on the analysis of the advantages and disadvantages of the existing models,the paper proposes a behavioral modeling method of digital devices(Func IBS modeling method),which can be used to characterize the functional characteristic and transmission characteristic of digital devices.The method divides the digital integrated circuit into functional section and IO buffer section,where the electrical characteristic of the buffer section is characterized by IBIS and the logic behavior of the functional section is depicted by the hardware description language.The entire model is finally developed by using VHDL-AMS.Then,in order to analyze the confidence degree of the proposed model,a double indices analysis method based on similarity degree of the shape and matching degree of the values is proposed in this paper,and the credibility of Func IBS model is analyzed by this method soon.In addition,the paper also designs a two-frequency circuit system,in which the components are modeled by using Func IBS modeling method,and the paper makes the function analysis to verify the feasibility of the Func IBS modeling method in the system modeling.Finally,the paper begins to study the characteristics of digital devices under the irradiation condition,and focuses on the impact of the total dose on digital integrated circuits.It is known to us that the IO circuit is an important part of the digital device structure,and it becomes a total dose-sensitive structure due to its high voltage,large size and other characteristics.Therefore,the paper focuses on the total dose effect of IO buffer under the condition that the logic function is normal,and we consider the factor of total dose effect on the normal Func IBS model to establish the total dose effect model of the digital device's buffer.Also,the feasibility of the Func IBS total dose effect model is analyzed at last.To summarize,the innovation of this paper is mainly reflected in the following aspects: 1.The Func IBS modeling method proposed by this paper is a modeling method for digital integrated circuits.This method does not depend on the specific process parameters of the device,so it can modeling any commercial digital devices with a buffer.2.A double indices analysis method based on similarity degree and matching degree is proposed,which is used as a criterion for evaluation of the confidence of the model.3.The behavioral level research method is introduced into the total dose effect modeling of digital devices,which reduces the difficulty of modeling.The model structure is simple and the calculation speed is fast,so it has obvious advantages in the face of large-scale integrated circuit simulation.