Working Mechanism Research Of CuPc Organic Tunneling Thin Film Transistor On Model

In this paper,the transistor structure is a vertical structure of the organic thin film transistor(OTFT),the vertical structure of the conductive channel length is very short,so as to effectively reduce the drive voltage,improve the device operating current.The copper phthalocyanine material with good photosensitivity,chemical properties and good stability was used as the active layer of the organic thin film transistor.The electrode material of the transistor is selected according to the metal-semiconductor contact theory so that the work function of the electrode is matched with the semiconductor material.A thin film transistor with ITO/CuPc/Al/CuPc/Cu structure was fabricated by vacuum deposition and magnetron sputtering.In this paper,the required OTFT is fabricated and its electrical properties and photocurrent characteristics effects are analyzed.First,verify that both diodes meet the rectification characteristics,the mathematic method is used to interpolate,and the mathematic relation which satisfies the curve change is obtained.On the Al/CuPc/ITO side,the reverse saturation current is 3.98×10-8A,the effective schottky barrier height is ?B=0.41eV.When the device forward voltage exceeds the threshold voltage will have a significant current.The experimental results show that Al/CuPc/ITO diodes have good rectifying characteristics.Then verify that the transistor meets the tunneling effect.An equivalent model of an organic thin film transistor was developed in Multisim 2001,at this time the current is divided into VGS by the source and VDs controlled source,the model of two controlled sources with two non-linear controlled source,according to the two controlled sources of current controlled relationship can be obtained in the voltage range,according to the experimental data to draw the I-V characteristic curve,and the actual experimental curves were compared to verify the correctness of the model.The above experiment is not light,so the analysis of the dark state of the organic thin film transistor characteristics.In the light,the device has significant photoelectric characteristics.The device has obvious photovoltaic response characteristics and the current is amplified.The current amplification factor was deduced from the experimental data.The minimum current amplification factor was 1.93 and the maximum value was 3.16 at forward bias.The equivalent model under the illumination is set up.At this time,the equivalent model is one more current magnification compared to the dark state,so a non-linear controlled source was added to the model.The controlled source of the polynomial is set to three nonlinear controlled sources.Plot and draw the model data curve,compared with the actual experimental curve,verify the correctness of the model.Error Analysis and Optimization.The reasonable model establishment provides the theoretical basis for studying the working characteristics of the transistor and preparing the transistor.