Research On The Package And Reliability Of 650V-150A IGBT Half-bridge Power Module

Power module is the key component to realize electric energy transformation and control,and the packaging process of IGBT module involves many disciplines such as heat,mechanics and materials.With the development of integration,the module volume is reduced,the current density and power are increasing,which makes the internal energy of IGBT module difficult to emit,resulting in more and more serious heat load and mechanical load,temperature and restriction The results show that the stress is produced and the reliability of the module is affected.Therefore,in order to further study the reliability of module packaging,it is necessary to study the failure mechanism,packaging materials,technology,structure and other factors of IGBT power module.The content of this paper is summarized as follows:First of all,the reflow soldering technology of IGBT module packaging technology is studied.Many reliability analyses show that the ideal degree of IGBT module welding process accounts for a large proportion in the reliability of the module.In the process of IGBT welding process,it is easy to cause parameters such as solder spatter,solder hole,multi-layer solder collapse,solder crack and so on,or the return flow will cause large residual stress and warpage of the module,which will reduce the process quality and affect the reliability of the module,reduce service life.Therefore,based on the reflow welding process parameters and packaging structure,to improve the reliability of the process.In addition,the heat dissipation performance of IGBT module package is studied,the actual three-dimensional finite element model of IGBT module package is established,the thermal structure coupling analysis is carried out,and the thermal stress distribution of the module is analyzed by indirect method.In addition,the maximum junction temperature and maximum thermal stress of the IGBT module package are calculated,and the material and thickness of the substrate,welding layer and substrate are studied The influence of performance and maximum thermal stress is analyzed,and the heat dissipation design of IGBT module is analyzed to provide reference for its structure.Finally,the parasitic inductance has an effect on the opening and closing of the module,which will affect the reliability of the system.The parasitic parameters of modules are studied.The feasibility of the mathematical model is verified by comparing the parasitic parameter mathematical model of the module with the simulation software.On this basis,the equivalent circuit model of power module is built,and the parasitic parameter simulation model is built by ANSYS to extract the parasitic parameters of the electrical connection components on the module.Through the study of parasitic parameters of power module,it provides effective guidance for the analysis and optimization of parasitic parameters of power module.