The Research On Organic Field-effect Transistor Memory Based On PVK Nanoarray

In recent years,due to the advantages of organic materials,such as wide sources,easy processing,low cost,and large area preparation,it has promoted the rapid development of the field of organic electronics.As one of the basic components of electronic equipment,memory has attracted widespread attention in society,in the research of memory devices,organic field-effect transistor memory has been widely concerned by researchers due to its advantages of non-volatile reading,easy integration,compatibility with various substrates.However,improving the retention capability and memory capacity is still necessary.In this thesis,we mainly used PVK to prepare high-performance organic field effect transistor memory.The main research contents and results are as follows:First of all,we use spin coating of polymer material PVK and TMP to produce nano-array structure by phase separation,which is applied to organic field effect transistor memory as a charge trapping layer.Compared with memory devices based on smooth PVK thin films,nano-array structures have greatly improved memory performance,including larger memory window(?18 V),stable retention capability(>10~4s),stable switching properties(more than 100 cycles)and bipolar storage.Then,we have prepared three types of transistor memory devices based on different PVK nanoarray morphologies,which are prepared when the volume ratio of TMP and PVK is 1:1,5:1,10:1.We hope that we can study the difference in morphology of the two materials at different ratios and its effect on the performance of organic field effect transistor memory through this way.With the AFM test,it is found that when the ratio is 5:1,the formed nanoarray is the most regular,orderly and independent,in the later study of electrical performance,its mobility,threshold voltage,writing speed and other parameters are better than those of the other two devices.The reason is probably that the nanoarray formed at 1:1 is not obvious,forming a discontinuous island structure,and it is difficult for charge to migrate.When the ratio of TMP and PVK is 10:1,because TMP does not have memory performance,this has an adverse effect on device performance.Finally,we studied the device performance of TMP and three different PVK derivatives(P1,P2,P3)doped as charge trapping layers.The study found that the three films after spin coating in this experiment did not form a nanoarray similar to the previous PVK but formed a connected island structure,which is not conducive to charge migration.In the subsequent electrical performance test,it was found that the three devices hardly have the ability to trapping holes,and can only trapping fewer electrons.Overall,their performance is not as well as that of PVK nanoarray devices.