Optimal Design Of Independent Gate NCFET Devices

As transistor sizes shrink sharply,traditional nano-devices are approaching the physical limits of device operation,and various short channel effects,gate oxygen tunneling,and subthreshold degradation are becoming more serious.Traditional transistors have not met the needs of modern society.In addition,the strong demand for high-speed and low-power chips for application systems requires that the chip integrate more transistors,but due to power consumption limitations,the transistors cannot be operated at high speed at the same time.Therefore,it is necessary to find a new type of device capable of reducing the above problem to replace the conventional transistor device.The NCFET(Negative Capacitance Field Effect Transistor)device is a new type of device.The NCFET uses a ferroelectric material with a negative capacitance effect on its gate stack based on the reference device,which can overcome the subthreshold swing limit and enable the gate voltage to be effectively amplified.It can also work normally when the gate voltage is relatively low,achieving the purpose of reducing power consumption by lowering the power supply voltage.Based on the above advantages of NCFET devices,the article will use NCFET devices as the research object,optimize the independent gate NCFET device,and then use this device for circuit design.In this article,we mainly study the following aspects:1.Implementation of an independent symmetrical gate NC-FinFET.The main idea is to combine the ferroelectric model with the FinFET model to form the NC-FinFET model we need.Through this model,the symmetry principle and gate voltage amplification effect of independent symmetrical gate NC-FinFET devices are studied.2.Optimization of independent symmetrical gate NC-FinFET devices.Based on the independent symmetrical gate NC-FinFET device model studied above,The independent symmetrical gate NC-FinFET device is optimized by the transfer characteristics,transmission characteristics,switching current ratio and ferroelectric thickness of the independent symmetrical gate NC-FinFET.3.Circuit design of an independent symmetrical gate NC-FinFET device.This article uses the flexibility of independent symmetric gate NC-FinFET devices to construct inverter circuits,NAND gates and/or NOT gates,XOR/OR gates,full adder circuits,and flip-flop circuits.In the low power(DG,Dual-gate)and short-gate(SG,Short-gate)modes,the number of transistors and the circuit performance of the circuit formed by the NC-FinFET device and the reference device are compared.Conclusion NC-FinFET devices can reduce power consumption and increase circuit integration.The results show that the circuit composed of independent symmetrical gate NC-FinFET devices has fewer transistors than the circuit composed of the reference device.Although the operating delay is increased,the power consumption of the device is significantly reduced,the device has a large improvement in the product of power consumption and delay.Since the independent symmetrical gate NC-FinFET device is compatible with the current integrated circuit process and can maintain a reasonable working speed at low voltage,it provides an important reference value for industrial production in the future.