Numerical Simulation Of Convection And Heat Transfer Of GalnSb Crystal Grown By Moving Heater Method

As a typical ?-? compound semiconductor,Gallium Indium Antimony can be widely used in detectors,lasers,photoelectric communication,satellite navigation,etc.,since the lattice parameter and energy gap can be controlled by adjusting In composition Due to the existence of a wide solid-liquid coexistence zone between the solidus line and the liquidus line in the pseudo-binary phase diagram of GaSb-InSb,the crystal growth will have more serious segregation of components and instability of the solid-liquid interface,which will affect the quality of the GaInSb.The process of the crystal growth by traveling heater method can reduce the influence of mechanical vibration on the solution flow,and achieve the purpose of zone melting the GaInSb crystal.In order to optimize the process parameters of the GaInSb crystal grown by the traveling heater method and shorten the implementation period,this paper used the finite element method to simulate the heat transfer and liquid phase convection of GaInSb crystal grown by traveling heater method under natural convection,and studied the effect of applying a rotating magnetic field on the heat transfer and liquid phase convection of GaInSb crystal.The main research contents and conclusions are as follows:(1)The relationship between the crystal radius and the temperature field in the furnace was studied.The results showed that with the increase of crystal radius under the same furnace temperature,the phenomenon of "thermal impermeability" would appear when the crystal was grown by the seed crystal method using the traveling heater method.As the crystal radius increased,the furnace temperature was increased to ensure that the crystal growth process could be successfully continued.However,if the furnace temperature was too high,it was easy to cause the seed crystals to completely melt,and the seed crystal introduction process would be failed.(2)The effects of furnace temperature and crystal radius on the temperature field and flow field distribution of GaInSb crystal grown by traveling heater Imethod were studied.The results showed that when the crystal was grown by the seed crystal method,the lower temperature would lead to the shape of the solid-liquid interface became more convex,and the radial flow velocity distribution of the solution became more unstable.On the contrary,the higher temperature would lead to the shape of the solid-liquid interface became less convex.However,at the same time the greater the temperature gradient of the crystallized crystal,the greater the probability of dislocation generation.At the same furnace temperature,as the radius increased,the degree of protrusion at the solid-liquid interface increased seriously,but the flow velocity of the melt increased little.Therefore,when a large diameter GaInSb crystal is grown by a traveling heater method,establishing a suitable temperature field is the key to growing a high quality GaInSb single crystal.(3)The effects of applying a rotating magnetic field on the temperature field and flow field distribution of the GaInSb crystal grown by the traveling heater method were studied.The results showed that the degree of protrusion of the solid-liquid interface of crystal growth can be significantly reduced by applying a rotating magnetic field,but the change of magnetic field intensity had little effect on the solid-liquid interface.The flow velocity of the melt increased by more than one order of magnitude after the application of the rotating magnetic field,and as the magnetic field intensity increased,the flow velocity of the melt increased significantly.The optimum magnetic field intensity with a diameter of 0.01 m using a rotating magnetic field was 10 mT.