Electrodeposition Preparation And Performance Study Of Cuprous Oxide Photoelectric Materials

Solar cells can be used directly from sunlight to generate electricity.It is a kind of green,environmental protection and sustainable energy converter.Copper oxide photoelectric film battery is widely concerned because of its low price,abundant reserves and good photoelectric effect,its absorption layer Cu₂O is a p-type semiconductor with a band gap of about 2.17eV.It has an octahedral cubic structure,and has a broad prospect in photocatalysis,battery,and superconductor.In this paper,Cu₂O thin film was prepared by electrochemical deposition.The prepared film was characterized and tested by X-ray diffractometer,electrochemical workstation,scanning electron microscope and four-probe resistance meter.The main research contents are as follows:?1?The experimental results show that when the Cu₂O thin film is prepared by electrodeposition,the increase of the deposition temperature is conducive to the formation of the thin film;It was found that the best crystallization of Cu₂O thin film was obtained when the deposition potential was-1.1V and the concentration of 0.015mol/L sodium citrate was used as complexing agent,Too negative deposition potential is not conducive to the formation of the target product;The target product is not obtained when the pH is greater than 2.The most suitable condition is pH value 2;Through SEM analysis,the size of the film grain increases with the increase of the deposition temperature;Through the analysis of the four-probe resistance meter,the resistivity and conductivity of the prepared Cu₂O thin film are consistent with the semiconductor range.?2?The effect of pH value on the electrochemical properties of the bath was analyzed by cyclic voltammetry in acid medium.The results show that at pH=6,the ions in the plating solution move faster and the reaction is more likely to occur;By analyzing the phase formation of Cu₂O film,it was found that the deposition potential,deposition temperature and deposition time were-0.1v,50?and 30min,respectively,which were most conducive to the formation of the target product,and there were no impurities;Increasing the concentration of the electrolyte solution is also beneficial to the formation of the target product Cu₂O,and the optimal concentration of electrolyte solution is selected at 0.06mol/L;According to SEM analysis,it was found that the morphology of the films was different under different deposition temperature and pH value.The morphology of the film is changed by increasing the temperature;The resistivity and conductivity of the Cu₂O thin film prepared in the acidic system were analyzed by a four-probe resistance meter in accordance with the semiconductor range.Compared with the previous system,the prepared thin film had higher conductivity and lower resistivity.?3?It is found that the time-ampere curve of the plating solution with different concentration of potassium chloride has the same trend;The effect of doping concentration and deposition time on Cu₂O thin film phase was also studied.With the increase of doping concentration and the extension of the deposition time,the intensity of the cuprous oxide diffraction peak showed a trend of first increase and then decrease.When the doping concentration is 0.006mol/L and the deposition time is 60min,the crystallization of the target product is best;The prepared film was analyzed by SEM.Doping with potassium chloride would increase the grain size of the film;The resistivity and conductivity of the Cu₂O film prepared by potassium chloride are analyzed by four probe resistors in accordance with the semiconductor range,As the doping concentration increases,the resistivity of the thin film gradually increases and the electrical conductivity decreases.