Preparation And Photoelectric Properties Of Antimony Selenide Based On Silicon

Antimony selenide is a new type of binary single-phase semiconductor material with a direct band gap structure.It has excellent properties such as stable structure?large optical absorption coefficient and adjustable band gap,making it suitable for photovoltaic,detection and light-emitting optoelectronic devices in a good application prospect.Moreover,the Seebeck coefficient of antimony selenide is as high as 1800?V/K,and it has great application prospects in the direction of thermoelectric devices.Because of these excellent properties,it has become a hot spot in recent research.In this paper,a simple?safe and efficient hydrothermal method,is used to control the experimental temperature?time and active agent to prepare high-quality single-phase antimony selenide one-dimensional nanowires and two-dimensional nanosheet structures.Nano-processing methods were used to prepare simple antimony selenide devices and their photoconductivity characteristics were studied.The photoconductivity detector exhibited lower dark current and better photocurrent response.it's main tasks as follows:(1)A method of hydrothermal synthesis of antimony selenide nanowires and antimony selenide nanosheets using cetyltrimethylammonium bromide as a structural morphology guide has been developed.Through the analysis and control of experimental conditions,nanowires with a diameter of about 150 nm?a length from 5 ?m to tens of micrometers were synthesized and the two-dimensional nanosheets had a size of 10 ?m in length?a width of 5 ?m and a thickness of about 15 nm were synthesized.The prepared materials were characterized by XRD?SEM?TEM?AFM?XPS?Raman?UV-Vis-NIR etc.The nanowires and nanosheets have a single orthogonal phase and the crystal quality is good.UV-Vis-near-infrared absorption results show that the material's light absorption is mainly in the visible and near-infrared region,and the main absorption band is concentrated in the visible near-infrared region.(2)Antimony selenide nanowires and nanosheet photoelectroconductive detector structures are prepared by using semiconductor micro-nano processing methods and interdigitated electrode structures.The dark current of 1D antimony selenide nanowires is 230 pA.Under the irradiation of 14.4 mW/cm2 and 532 nm laser and 1 V bias,the photocurrent reaches 45 nA and the switching ratio reaches 196.The rise and fall time of its photocurrent response is 0.09 s-0.1 s;the dark current of the 2D antimony selenide nanosheet photoconductive detector is 250 pA,under the conditions of 3.6 mW/cm2,405 nm laser irradiation and 3 V external bias,the photocurrent is 1.8 nA,and the device switching ratio is 7.2,The rise/fall time of its photocurrent response is 0.1 s-0.16 s.