Sub-eutectic growth of semiconductor nanowires and metal/semiconductor nanowire heterostructures

One-dimensional semiconducting nanowires exhibit considerable promise for electronic, magnetic and optical applications due to their novel properties. Synthesis and processing methods that enable the controlled formation of nanowire heterostructures are of particular interest because the incorporation of functional elements such as quantum wells, p-n junctions, and metallic contacts support the development of advanced device structures and architectures. Free-standing one-dimensional Mn11Ge8/Ge nanowire heterostructures have been synthesized by chemical vapor deposition at sub-eutectic temperatures. The growth mechanism will be described in detail. Self-assembled Mn-germanide particles seed the growth of Ge nanowires. Simultaneous anisotropic growth of Ge nanowires and the Mn11Ge8 seed particles from a shared growth interface is observed. The decomposition of the source materials (GeH4 and TCMn, respectively) limits the growth of both phases. Experiments utilizing atom probe tomography to characterize the Mn11Ge8/Ge...