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Pulsed laser ablation and micromachining of 4H and 6H silicon carbide wafers for high-temperature MEMS sensors

Posted on:2009-07-01Degree:M.SType:Thesis
University:Iowa State UniversityCandidate:Gupta, SaurabhFull Text:PDF
GTID:2441390002991236Subject:Engineering
Abstract/Summary:
This thesis provides a scientific investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC to improve the manufacturability and high-temperature performance of SiC based MEMS pressure sensors using laser applications. The ablation characteristics of both the polytypes were studied using pulsed lasers and micromachining results were presented. The study shows the possibility of these devices capable of operating in harsh environments.
Keywords/Search Tags:Ablation
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