| Solid phase epitaxy (SPE) research in silicon-germanium (SiGe) alloys has been receiving much attention recently. However, when SPE is applied to Si based thin films, roughening of the amorphous-crystalline interface of Si occurs. Recently, it was found that the effect of stress on the atomic mobilities influences the growth instability [3]. The objective of the current work is to pursue a new investigative direction in examining the stress effects on the defect generation of the intrinsic Si thin films and the boron-doped Si thin films by means of an FEA-based FSI analysis. The simulation results are compared with the existing experimental results [3, 4, 5] and the simulation results of the previous models [3, 5, 6]. The research findings suggest that the anisotropy of Si and FSI analysis must be appropriately considered in any modeling of the SPE in SiGe alloys. |
