| The use of thin films with high elastic modulus, fracture toughness and various physical properties find silicon carbide as an important material for technological applications. Among various polytypes, 3C-SiC has been considered as a good choice of materials for developing high temperature and high frequency devices for integrated electronics.;The purpose of the present work is to use the Fourier transform infrared (FTIR) spectroscopy to evaluate the thickness, structural and crystalline properties of the V-CVD grown 3C-SiC/Si (100) films. The results of infrared transmission and reflection spectra are analyzed using a modified effective medium theory by evaluating dielectric functions of the material. The spectra features as influenced by interfacial layer, surface roughness, film thickness, phonon damping, free carrier concentrations, plasma damping constant, and the effect of two component effective medium model of crystalline grains and intergranular heterogeneous material when they co-exist in 3C-SiC are methodologically included in the calculation. |
