Spatially resolved analysis of rare gas and carbon-based plasmas in RF systems

Radio frequency (RF) plasmas are the primary method used for etching by the semiconductor industry. Diagnostics of the plasma has been done using laser induced fluorescence, microwave interferometry, Langmuir probes, as well as absorption and emission spectroscopy. Spatially resolved optical emission spectroscopy (SROES) in particular has been used to monitor plasma uniformity. This thesis completely maps out the three dimensional (3-D) emission of the 13.56 MHz RF powered Gaseous Electronics Conference (GEC) reference cell, a test bed experimental reactor for plasma scientists.; As the physical limits of silicon-based microelectronics are reached, a need for new materials is needed in order to continually improve processor speed. Carbon nanotubes have been suggested as a material to fill in where silicon technology leaves off due to their small dimensions and unique metallic and semiconductor properties. This thesis proposes that RF plasmas be used to produce nanotubes since 13.56 MHz is the current semiconductor industry standard, thus making a future transition easier.; The analysis of carbon growth on substrates containing metal catalyst show a variety of allotropes. Graphite and carbon nanostructures are among the different types of carbon-based materials grown in the GEC for varying initial conditions presented in this thesis.