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Fabrication of metal matrix composite of copper and silicon for microelectronics packaging

Posted on:2003-05-21Degree:M.SType:Thesis
University:University of LouisvilleCandidate:Thotakura, RajeshFull Text:PDF
GTID:2461390011485900Subject:Engineering
Abstract/Summary:
Microelectronics packaging consists of different functions of power distribution, signal distribution, heat dissipation and package protection Many changes are taking place in the microelectronics packaging to meet the challenges for next generation systems ranging from low performance application systems to high performance application systems. Substrate materials play an important role in microelectronics packaging. Substrate material should have high thermal conductivity, low expansion, cost effective, and good electrical properties.; Copper has good thermal and electrical properties. Silicon has low coefficient of thermal expansion (CTE). Metal matrix composite (MMC) of copper and silicon has high thermal conductivity and low CTE thus making it a potential candidate as substrate material in microelectronics packaging. The purpose of this research is to fabricate a metal matrix composite of silicon and copper, which satisfies the requirements of substrate material.; In this research, Powder metallurgy (PM) technique is used to fabricate MMC of copper and silicon. Small quantity of aluminum is used to enhance wetting between copper and silicon. Powder metallurgy is the process that involves blending the copper, aluminum and silicon powders; compacting them using 1800 Psig pressure; and sintering them to 1100°C. Composites of silicon 55–80 Vol.%, aluminum 5–10 vol.%, and balance copper are fabricated in this study.; The densities of composites with 70–80 vol.% Si, 10 vol.% Al and balance Cu are calculated using Archimedes method ASTM (C830-00) and geometric dimension. Based on the results obtained ideal composite is identified as the one with 71 vol.% Si, 10 vol.% Al and balance Cu. Material characterization is done on 71 vol.% Si, 10 vol.% Al and balance Cu using X-ray Diffraction (XRD), X-ray Florescence (XRF), Thermo-Mechanical Analyzer (TMA) and Differential Scanning Calorimeter. The CTE value of 5.15 × 10−6/°C and the thermal conductivity of 40.51 (W/m.°C) is achieved for the composite.
Keywords/Search Tags:Microelectronics packaging, Metal matrix composite, Silicon, Copper, Thermal conductivity, CTE, Vol
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