| The ability of silicon carbide to function under extreme conditions is the main driving force behind most research activities related to this material. For wide bandgap device applications, SiC JFET transistors have some advantages over MOSFETs. One of the advantages is that the JFET transistor is more reliable at high temperature because a dielectric layer is not needed for the JFET device. In addition, a SiC enhancement-mode JFET is feasible due to the wide bandgap property of silicon carbide. Complementary n-channel JFETs, i.e. both enhancement-mode and depletion-mode, enhance design flexibility for analog circuit design. In this work, SiC JFET-based analog building block circuits are presented. Two operational amplifiers are designed using complementary n-channel JFETs. Various op amp specifications such as open loop frequency response, input-common mode range, slew rate, power-supply rejection ratio, and output voltage range are simulated. |
