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Investigations of the low-dielectric-constant fluorinated polyimide for use as the interlayer dielectric in ULSI

Posted on:1997-12-23Degree:Ph.DType:Thesis
University:Rensselaer Polytechnic InstituteCandidate:Lee, Yong KeunFull Text:PDF
GTID:2461390014484301Subject:Materials science
Abstract/Summary:
Polyimides are playing an increasing role in the protection and as an insulator in a variety of electronic components because of their unique features such as high thermal stability (400 to 450;In this thesis, the properties and processibility of a fluorinated polyimide was investigated as a thin film ILD in VLSI or ULSI chip interconnection schemes. The thermal stability of the film has been studied by using TGA with in-situ FTIR, showing that the film was stable up to 450;These investigations indicate that the polyimide examined in this thesis satisfies the stated materials properties of an ILD. However, more work is necessary in elucidating their processibility (especially via filling, compatibility with surrounding materials, and planirizability), reliability, and performance in actual use conditions.
Keywords/Search Tags:Polyimide
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