| In this thesis, spontaneous ordering in the III-V semiconductor GaInP{dollar}sb2{dollar} is explored with a variety of optical spectroscopy techniques. Studies of this technologically important semiconductor show that the ordering phenomenon manifests itself in a non-uniform fashion throughout epitaxially grown films, and a microscopic model is proposed that accounts for photon emission and absorption features which were previously considered anomalous. In a separate experiment, the first all-optical method of distinguishing between single and double subvariant spontaneously ordered samples is developed. Finally, first-order device modeling is used to predict that ordered Ga{dollar}sb2{dollar}AsSb may be used to construct monolithic lattice- and current-matched multiple junction thermophotovoltaic power generators for a broad range of radiator temperatures. |
