Scattering of keV ions from a clean silicon single crystal surface |
Posted on:1993-01-13 | Degree:M.Sc | Type:Thesis |
University:University of Ottawa (Canada) | Candidate:Gauthier, Pierre | Full Text:PDF |
GTID:2471390014497655 | Subject:Physics |
Abstract/Summary: | |
An apparatus for measuring energy and angular distributions of keV ions forward scattered from atomically clean silicon surfaces was designed and assembled. A consistent procedure for cleaning Si(100) single crystal surfaces under ultra-high vacuum was established. Experimentally, oxygen ions were surface scattered from a clean Si(100) sample and the ratios of outgoing negative to positive ions were measured. By using a positive oxygen beam and then a negative oxygen beam we obtained strong evidence that ions retain no memory of their initial charge state after it undergoes a violent collision with a single atom. The ratios of negative to positive scattered oxygen ions for both an incident O... |
Keywords/Search Tags: | Ions, Clean, Single, Scattered, Oxygen |
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