Gallium arsenide grown by two molecular beam epitaxy techniques at reduced substrate temperatures

his thesis presents an extensive study of the growth and electrical properties of GaAs grown by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) at 300;The electrical conduction in the MBE-grown LT-GaAs was via a hopping mechanism, which showed a higher onset temperature ;These LT-GaAs layers can be used for different device applications. A thin MBE-grown LT-GaAs layer (50;AlGaAs/GaAs heterojunction bipolar transistors with a MEE-grown LT-GaAs base showed a common-emitter dc current gain...