| Thin film material is one of the most important subjects in the field of material science,which is widely used in the fields of national defense science,computer science and technology and optoelectronics industry.At present,the thin films prepared by metal oxides(ZnO)are widely used in solar cells,UV detectors,gas sensors and light-emitting devices.ZnO is a semiconductor material composed of group II and group VI elements,the band gap is 3.3 eV.N-type thin films with good properties can be prepared by Al,Ga and other III group elements doped ZnO,and the film resistivity is generally low;by N,P,As and V doped ZnO to prepare p-type film,the film resistivity is generally higher.Therefore,we can consider the preparation of new thin films by co-doping,which is beneficial to expand the application scope of ZnO materials.Magnetron sputtering is a physical deposition method for preparing thin films,which has the advantages of low preparation temperature,fast film growth and strong adhesion between thin film and substrate,basically can be coated for all conductor,semiconductor material film.In this paper,NGZO thin films were prepared on quartz glass substrates by RF magnetron sputtering.The experiment using X-ray diffraction(XRD),scanning electron microscopy(SEM),ultraviolet visible spectrophotometer(UV-vis)and Hall effect tester respectively be researched the effect of(sputtering power,sputtering pressure,substrate bias),nitrogen flow rate and magnetic field on crystal structure and surface morphology of NGZO thin films and photoelectric properties.The experimental results are as follows:1.The NGZO films prepared by experiment still maintain the structure of the wurtzite hexagonal crystal,still on(002)crystal surface and grow preferentially along the c axis.With the increase of sputtering power,(002)the diffraction peak intensity increased,the half width gradually decreased,and the crystalline quality of NGZO films were gradually improved;the particle size of the film surface gradually increased,and the particle distribution uniformity gradually improved;the transmittance of film were less than 400 nm when absorption were more,there were UV-cutoff characteristics,the transmittance of the films were about in the range of 600~800 nm,and the optical band gap were larger than the gap width of ZnO itself;the film resistivity gradually decreased and had a minimum value of 3.06 ?·cm at 150 W.2.With the increase of sputtering pressure,NGZO films were in good agreement with ZnO crystal structure,and the crystalline state was best at 1.6 Pa;the particle size of the films increased continuously;the transmittance of the films were higher than 80% nm band in the range of 600~800 nm;the film resistivity first decreased and then increased.3.With the increase of substrate bias,NGZO films maintained the original crystal structure of ZnO,and the crystalline state was best at 90 V;the particle size gradually increased and the distribution uniformity was best at 90 V;the transmittance of the films were about 80% in the range of 600~800 nm;the film resistivity decreased first and then increased,and had a minimum value of 1.54 ?·cm at 90 cm.4.Under the condition of constant argon flow rate,with the increase of nitrogen flow rate,NGZO films were consistent with the ZnO crystal structure,and when nitrogen flow rate was 25 sccm,the film crystallization was the best;the particle size increased with the increase of nitrogen flow rate;the transmittance spectrum of the films appeared "red shift",and the transmittance were about 82% in the range of 600~800 nm;the film resistivity first decreased and then increased.5.With the increase of applied magnetic field strength,the crystallinity and density of NGZO films gradually increased;the UV-cutoff properties also existed through the atlas,and the transmittance of thin films gradually increased in the range of 600~800 nm;the film resistivity decreased with the increase of magnetic field strength. |
PDF Full Text Request