| The progress of science and technology makes the thin and light display panel become the trend of development, Transparent conductive film(TCO) is an important part of the display panel. Which has become a hot spot in the research of thin film materials in recent years. The optical properties of TCO films with high quality must be high in the visible light range(transmittance greater than 80%) and has a good conductivity(resistivity is lower than 10-3 ?·cm). At present, due to the shortage of In resources, ITO thin films have to develop effective substitutes which is widely used in gas sensors, light emitting diodes, solar cells and liquid crystal displays and other fields. Because of the poor electrical conductivity of the intrinsic ZnO, it is usually mixed with group III elements, such as B3+, Al3+, Ga3+, etc., to increase the conductivity and stability,. Al and Ga elements were the most hot in the doped ZnO film, Because the ionic radius of Ga3+ is closest to the ionic radius of Zn2+, Ga-O key and Zn-O key do not have much difference, in addition, GZO has advantages over AZO which residual stress is much smaller. At present, the theoretical study of GZO thin film is not perfect, so it is necessary to study it deeply.In this paper, high quality GZO thin films were prepared on the quartz glass which serves as a substrate by FJL560D2 RF magnetron sputtering with different sputtering techniques, such as the pressure, power and substrate bias; The difference of the properties of GZO thin films with different annealing temperatures were discussed after sputtering; The influence of different magnetic field strength on the properties of GZO thin film is discussed by introducing an external magnetic field; Using X-ray diffraction(XRD), scanning electron microscopy(SEM), ultraviolet spectrophotometer(UV-vis), four probe tester, Holzer tester and other analytical methods to study the changes of microstructure, surface morphology and photoelectric properties of the films systematically. Experiments and analysis show that:1.The all thin films which were deposited have a hexagonal wurtzite structure and is polycrystalline, the thin films were grown on(002) crystal orientation along the C axis; The appropriate sputtering power can increase the grain size of the thin film and increase the crystallization quality, so that the film surface is more smooth and dense;2.The sputtering power has a great influence on the GZO film prepared by RF magnetron sputtering. When the sputtering power of 150 W film crystalline quality is the best. The average transmittance of more than 85%, resistivity minimum reached 6.8×10-3 ?·cm. Sputtering power increases in a certain range, the grain size of the films increases, the crystallization performance is better, and the internal defects and grain boundaries are weak, Under the same conditions, the carrier mobility is higher, and the conductivity of the films is also better.3.Substrate bias did not change the growth mode of the thin film, and all the films were in(002) crystal plane preferred orientation, and the intensity of the(002) diffraction peak increases with the increase of substrate bias, and the grain size increases with the increase of the crystal quality, When the substrate bias is 150 V, the transmittance of film reached 96%, and the resistivity fell to the lowest which is 4.55×10-4 ?·cm.4.The growth mode of GZO thin film is less affected by the annealing temperature of 400-800 ℃. The thin films are in(002) crystal orientation along the C axis. Annealing temperature has a greater influence on the surface morphology of the films, When the annealing temperature is 600 ℃, the film surface is compact and smooth, and the crystalline quality is the best. The transmittance of the film is over 95%, the lowest resistivity is 4.9 x 10-4 ?·cm.5.The external magnetic field strength has a little influence on the crystal structure of the films, the all thin films which were deposited have a hexagonal wurtzite structure and is polycrystalline, the thin films were grown on(002) crystal orientation along the C axis; however, which has a great influence on the photoelectric properties of the films, The average transmittance of the films is over 93% and have a phenomenon of Burstein–Moss effect. The electrical properties of the films were improved, the resistivity from 4.96×10-4 ?·cm fell to 3.17×10-5 ?·cm and hall migration rate increased from 7.36 cm2(V·S) to 9.53 cm2(V·S). |
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