The Examination On Photoelectric Properties Of Al-doped Ga₂O₃ Thin Films

Ga₂O₃ is a new type of wide band gap semiconductor material.Due to its excellent physical characteristics(such as large band gap,high breakdown electric field strength,etc.)and good chemical stability,it is used in ultraviolet detectors,power devices and other fields.In recent years,,it has attracted more and more scholars'attention and its future is bright.The mainstream gallium oxide semiconductor devices are in the form of thin films.In order to obtain better performance gallium oxide thin films,doping can usually be used to improve it.This has also been proved to be an effective method by many researchers.The purpose of this article is to use alumina material with larger band gap width to dope the gallium oxide thin film and change its band gap width in order to obtain a reliable method for adjusting the band gap of gallium oxide and explore its growth and UV.Photoelectric characteristics.First,the aluminum doped growth of the gallium oxide thin film was performed by the PVD method to obtain a thin film material in the form of(Al_xGa_1-x)₂O₃ crystal,and then analyzed by means of surface morphology,element composition,optical properties and the like.The conclusion shows that with the increase of Al content,the film always adopts the crystal structure of?-Ga₂O₃ as the main form of crystals,and Al³⁺enters the original ?-Ga₂O₃ crystal by substitution.At the same time,under the experimental conditions of this paper,the annealing at 1000?is a better annealing temperature to improve the crystal quality of the thin film.Second,data processing can obtain the grown film composition,and its band gap can be expanded to 5.32e V by doping.Compared with?-Ga₂O₃,the band gap is significantly expanded.It is expected to further regulate the film thickness by changing the Al concentration.The band gap varies between wider ranges.Third,after the film growth is completed,the PVD method is used to grow interdigital Ti/Au electrodes on the film surface.The probe method was used to test the I-V and I-t characteristics of the light and dark band currents.The results show that the photoluminescence and dark current of the prepared aluminum gallium oxide film under the condition of 254nm ultraviolet light,and the films with different doped Al concentrations are all Has better violet photoelectric response.