The Study On Improving The Efficiency Of Quantum Dot Light-emitting Diodes

Quantum dots are widely concerned due to their tunable size,good monochromaticity,wide emission wavelength,and high fluorescence quantum volume,and they have widely used in biomedical fields and semiconductor materials.In order to improve the efficiency of QLED devices,the dissertation studies the theoretical analysis of QLED device structure,quantum dot working mechanism,material energy level matching,and the in-depth study of carrier balance in cadmium-free quantum dot structures is studied.And carry out in-depth research from structural design,functional layer thickness determination,carrier injection balance,device efficiency.The main work is as follows:1.The effects of various functional layers on the carrier balance of In P quantum dot light-emitting devices and the effects of the thickness of the light-emitting layer and the electron transport layer on the device efficiency were investigated.Improving device efficiency from the perspective of manufacturing process optimization.2.Doping method is used for the electron transport layer and the hole injection layer to improve the carrier mobility and change the material band structure to improve the device efficiency.In this paper,Mg,Y,Zr,Al doping of the electron transporting layer is used to study the effect on the device efficiency.Mg ion doping using Ni O as hole injection layer to study its effect on device efficiency.3.Ultra-thin white light device is prepared by using red,green and blue quantum dots as a stable super thin white light source for micro measurement equipment.