Preparation And Characterization Of Transparent Conductive Films Based On ZnO / Metal / Graphene Structure

Graphene,as two-dimensional network structure composed of carbon atoms,has attracted extensive attention due to its high toughness,high mobility,high specific surface area and high transmittance.Graphene is expected to replace indium tin oxide to solve its toxicity,brittleness and low storage status to improve the practical application of transparent conductive films.However,monolayer graphene is easy to be oxidized and scratched.The preparation of metal oxides and metal nitrides on the surface of graphene can protect it from scratch,but the loss of electrical properties is serious.It is proposed to add a metal layer between ZnO and graphene to protect the electrical performance.In this paper,metal and ZnO layers were continuously deposited on graphene/glass substrates by magnetron sputtering to prepare ZnO/metal/graphene multilayer transparent conductive films.By controlling whether the graphene is RF cleaned or not,to clear the influence of RF cleaning on the performance of graphene.By controlling the deposition thickness of different metal layers and controlling the photoelectric properties of the films,to clear the role of charge transfer at the interface of different metal layers.The microstructure and photoelectric properties of the films were characterized by Scanning Electron Microscopy,Atomic Force Microscopy,Infrared Spectrometer,X-ray Diffraction,UV-visible Spectrophotometer,Hall Effect Meter and Raman Spectroscopy.The main results are as follows:Graphene materials are prone to failure for a long-term storage will directly destroy their electrical properties.Radio frequency etching of the graphene surface can effectively increase the surface contact activity and contact area of the graphene material,and the increase in substrate temperature caused by etching can help the crystal growth of the upper film and improve the electrical properties of the overall film.In order to further optimize its electrical properties,a metal layer is added between ZnO and graphene.Among them,the discrete Ag dots mainly play the role of charge transfer;the continuous Ag film exhibits metallic characteristics,and the carrier density of the overall film remains the same as that of the metal.Inserting a metal Ni layer cannot improve the electrical transmission between ZnO and graphene,but it will significantly change the optical band gap of the material,so that the optical band gap of the graphene+Ni+ZnO composite film is kept near 3.28-3.31 e V.