Preparation And Properties Of Sn_xS_y Thin Films By Sol-gel Method

Snx Sy compounds belong to the IV-VI group of semiconductor materials,which have a wide range of applications and excellent semiconductor properties.At the same time,Snx Sy compounds are abundant in the earth,low in price,and have good environmental compatibility.In this paper,the main work was to reduce the production cost of Snx Sy films,optimize the preparation process,find a suitable preparation method for industrial production and carry out the technical research.Also,it was studyded that performance characterization and controllable preparation of the film.The main work was as follows:(1)Through the preliminary exploration of the sol-gel process of Snx Sy thin film,which including the attempt,the source of Sn source,solvent,stabilizer,water bath temperature,time,Sn²⁺concentration,S/Sn,pyrolysis and annealing temperature of sol-gel preparation process.Then,the preparation scheme of Snx Sy films prepared by sol-gel method was preliminarily determined.(2)Sn₂S₃ films were prepared by sol-gel spin-coating method.Stannous chloride dihydrate(Sn Cl₂·2H₂O),thiourea(SC(NH₂)₂)were selected as Sn and S sources,and S/Sn=1.It was studied that the effect of annealing temperature on the physical properties of Sn₂S₃ thin films systematically.The results show that the annealing temperature mainly affects the phase of the films and then affects the other physical properties of the films.(3)SnS films were prepared by sol-gel spin-coating method.Stannous chloride dihydrate(Sn Cl₂·2H₂O),thiourea(SC(NH₂)₂)were selected as Sn and S sources,and S/Sn=1.4.It was studied that the effect of annealing atmosphere on the physical properties of SnS thin films systematically.The results show that The dominant phase in all the films was SnS phase.When the annealing atmosphere changed from argon to hydrogen,the preferred orientation of SnS phase changed from(040)to(101)crystal.With the different preferred orientation,surface topography of the films was different.In addition,the narrowest band gap of films was 1.10 e V.The SnS film has a certain reflection effect on the near infrared region.(4)SnS₂ films were prepared by sol-gel spin-coating method.Stannous chloride dihydrate(Sn Cl4·5H2O),thiourea(SC(NH₂)₂)were selected as Sn and S sources,and S/Sn=2.It was studied that the effect of annealing and pyrolysis temperature on the physical properties of SnS₂ thin films systematically.The results show that the phase in all the films was SnS₂ phase with hexagonal crystal structure.Surface topography of all films was porous.It was found that the pyrolysis temperature has a great influence on the morphology.The lower the pyrolysis temperature was,the larger the pores were.In addition,the pyrolytic temperature has a great influence on the photoelectric properties.The annealing temperature has little effect on the physical properties of SnS₂ films prepared by sol-gel method.In this paper,SnS and SnS₂ thin films with good quality were prepared by sol-gel method.It was explored that the optimum technological parameters for preparing these films.It lays a foundation for the further study on the preparation of Snx Sy thin films with high quality and wide application by sol-gel method.