Study On Preparation And Optoelectronic Properties Of Al、Ga Doped ZnO Transparent Conductive Thin Film Prepared Via Sol-Gel Method

With the development of the hot spots in the field of solar photovoltaic technology,display technology,gas sensor,special function window coating as well as a variety of electronic devices,transparent conductive oxide film occupies more and more important position in semiconductor materials.Indium-tin-oxide（ITO）film is currently used as the mainstream products in industry.However,further application of ITO film has been restricted due to lack of resources,expensive price and poor stability in hydrogen plasma.ZnO is a novel TCO film materials.ZnO possesses wide band-gap,high exciton binding energy and selectivity for light.ZnO has been expected to become a preferred candidate instead of ITO films,because of their abundant resources,low price,non-toxic,good stability under the exposure to hydrogen plasma and low deposition temperature.In this paper,doped ZnO film were prepared by sol-gel method on glass substrate.The effect of Ga concentration,annealing temperature,sol concentration and film thickness on the structure,surface morphology,optical and electrical properties of these films has been studied.The transmittance and resistivity were used as evaluation indicator to ascertain optimum process parameters of films.The main research contents are listed as follow:（1）Ga-doped ZnO films were prepared via sol-gel method,photoelectric properties of films were discussed and the optimum process parameters of films were obtained by comparing transmittance and resistivity of films under different Ga doping concentration and annealing temperature.The film doped with 4at.%Ga doping concentration under the annealing temperature of 500℃exhibits best optoelectronic properties.Under optimum conditions,the best mean transmittance of 98.7%in the visible range and resistivity of4.296×10^-3Ω·cm of GZO film were obtained（2）Al、Ga co-doped ZnO films were prepared via sol-gel method,photoelectric properties of films were discussed and the optimum process parameters of films were obtained by comparing transmittance and resistivity of films under different sol concentration,annealing temperature and film thickness.The film with sol concentration of0.3mol/L,film thickness of 10 layer and the annealing temperature of 500℃exhibits best optoelectronic properties.Under optimum conditions,the best mean transmittance of 98.5%in the visible range and resistivity of 7.0×10^-3Ω·cm of GAZO film were obtained...