| In recent years,nano-sized ferromagnetic metal films and multi-iron composite films have attracted much attention.In this paper,ultrathin Fe-Ga/Fe-Co nanofilms with different thicknesses were prepared,their structural components and surface morphology were characterized,and the existence of abnormal Hall effect was found when the Hall effect was tested on the nanofilms with different thicknesses.The resistance transition behavior on the surface of nano-ferromagnetic films is studied.Resistance transition behavior is reversible and occurs between high(low)resistance states.Due to the coulomb blocking effect in the nanometer metal cluster structure,the resistance transition behavior appeared on the surface of the nanometer metal film.In addition,Pt/BZT-BCT/Fe-Ga multi-ferroelectric composite films were prepared,in which BZT-BCT films showed good ferroelectric and piezoelectric properties,and the modulation of resistance state of Pt/BZT-BCT/Fe-Ga magnetoelectric composite films by bias voltage was investigated.The resistance state of bias voltage modulated Fe-Ga composite film is mainly attributed to the strain coupling effect between ferroelectric BZT-BCT film and ferromagnetic Fe-Ga film.The electric field is used to directly regulate the resistance state of ferromagnetic nanofilms,which provides a new possibility for the realization of non-volatile memory.In the composite magnetoelectric film composed of ferroelectric thin film and ferromagnetic thin film,the writing process of information can be realized by electric field.In the composite magnetoelectric film,magnetic polarization and electric polarization can coexist,so as to realize the high-density storage of information. |
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