The Uniformity Of Titanium And Titanium Nitride Films Deposited On The Inner Surface Of The Hemispherical Workpiece By Magnetron Sputtering

When using magnetron sputtering to prepare films on the surface of complex-shaped workpiece,there are different tilt angles between different parts of the workpiece and the target,which will lead to"shadow effect".The"Shadow effect"will result in the difference of the uniformity of film thickness,structure and performance in different parts of the complex-shaped workpiece.And it weakens the performance and service life of the protective film.To solve this problem,it is necessary and meaningful to control the"shadow effect"by optimizing the process parameters of the film deposition process.In order to meet the needs of corrosion-resistant surface modification of complex-shaped components,the titanium(Ti)and titanium nitride(TiN)films,which can impove the corrosion resistance and service life,were prepared on the surface of the complex-shaped workpiece by magnetron sputtering.A hemispherical workpiece is selected to simulate the complex-shaped workpiece.In order to study the effects of particle energy and deposition time on the shadow effect of Ti films prepared by direct current magnetron sputtering(DCMS)on the workpiece,the particle energy is adjusted by changing the conductivity of the substrate and the film thickness is adjusted by changing the deposition time.Besides,in order to study the effects of particle energy on the shadow effect of TiN films prepared by high power pulsed magnetron sputtering(HPPMS)on the workpiece,the particle energy is adjusted by changing the working pressure.The main findings are shown as follows:(1)When Ti films are prepared on the inside surface of the hemispherical workpiece,the target distance and"shadow effect"can affect the thickness uniformity of Ti films.With the increase of deposition time,the uniformity of film thickness of Ti films prepared on semiconductor substrate Si and metal substrate 316L stainless steel at different positions on the inside surface of the hemispherical workpiece increased.(2)When Ti thin films are prepared by DCMS on the inside surface of a hemispherical workpiece,the uniformity of crystal structure of the Ti films prepared on the insulator substrate SiO₂ and on the semiconductor substrate Si decreased with the increase of deposition time.(3)At the initial stage of Ti film deposition on the inside surface of the hemispherical workpiece by DCMS,the Ti film deposited on the Si matrix did not show obvious"shadow effect".With the increase of deposition time and the increase of the angle between Si substrate and plasma beam direction,the"shadow effect"of Ti thin films was intensified.Compared with the semiconductor substrate Si,the"shadow effect"of Ti films deposited on the insulator substrate SiO₂ with worse electrical conductivity is more obvious.(4)When TiN films are prepared by HPPMS on the inside surface of the hemispherical workpiece,as the increase of working pressure,the uniformity of the crystal structure and the uniformity of the hardness of TiN films increase but the uniformity of the film thickness decreases.In this paper,the effects of deposition time,substrate conductivity and working pressure on the structure and performance uniformity of deposited Ti and TiN films at different positions on the inside surface of a hemispherical workpiece were studied.The effects of film thickness and particle energy on Ti film"shadow effect"was revealed.And the effects of particle scattering and particle energy on the"shadow effect"of TiN films are revealed.The related research results lay a solid foundation for the preparation of Ti/TiN composite films with uniform structure and performance on the surface of some complex shape components.