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Study On Preparation Of Ag/FTO Transparent Conductive Thin Films With Hole Array Structures By Laser Ablation

Posted on:2022-10-27Degree:MasterType:Thesis
Country:ChinaCandidate:W Z WangFull Text:PDF
GTID:2481306506462374Subject:Mechanical engineering
Abstract/Summary:PDF Full Text Request
Fluorine-doped tin dioxide(FTO)film,as one of the most representative transparent conductive oxide(TCO)films,was earlier applied to business due to its stable thermal,chemical stability,low cost and excellent overall performance.In recent years,the research and application of hole array structure on the surface of thin film have appeared,mainly on the surface of pure metal film and on the surface of pure TCO film.For the hole array structure ablated on the surface of pure metal,although the optimized laser parameters make the quality of ablated surface hole array relatively good,and the transparency of thin film has been improved,the conductivity of thin film has been severely reduced due to the lack of conductive materials and the large amount of spatter generated during the ablation process.In view of the above problems,this thesis introduced FTO substrate to prepare Ag/FTO film on the basis of metallic silver film,and improved the laser scanning method to ablate the hole array structure Ag/FTO transparent conductive film,and focused on the influence of laser parameters on the surface morphology,XRD and comprehensive performance of the film.Some meaningful research results were obtained as follows.1.The Ag layer was sputtered on the FTO glass substrate by magnetron sputtering,and then the dot hole array structure was prepared by spot ablation of Ag/FTO thin film surface by nanosecond pulse laser with wavelength of 532 nm.The influence of silver layer thickness on Ag/FTO film,the influence of laser energy density,scanning speed and scanning line spacing on Ag/FTO thin films with dot hole array structure were studied in order of surface morphology,XRD and comprehensive properties,and the mechanism of laser ablation of spot holes was discussed.The results showed that the comprehensive properties of Ag/FTO films with dot hole array structure were affected by the amount of splash around the hole,the metal coverage of the upper Ag layer,the depth of the round hole and the annealing effect.The larger the energy density,the larger the diameter and the deeper the hole diameter,the larger the amount of splash around the hole,the smaller the distance between the dot holes.At this time,the comprehensive properties of the film were greatly affected by the amount of splash around the hole,the depth of the dot hole and the annealing effect,and exceed the metal coverage.when the energy density was 1.2 J/cm2,the figure of merit value was the largest of 1.84×10-3?-1.The results showed that the scanning speed and the distance between scanning lines had little influence on the splash quantity of the hole circumference under the condition of hole parameters(depth and diameter).The comprehensive properties of the films were mainly affected by the metal coverage of Ag layer,followed by annealing.When the laser scanning speed was 90 mm/s,the maximum figure of merit value was 2.09×10-3?-1.When the scanning line spacing was 50?m,the maximum quality factor value was 2.34×10-3?-1.which was larger than the quality factor value of previous studies(1.41×10-3?-1),suggesting that the introduction of FTO substrate can further improve the comprehensive performance of the porous array structure film.2.The influence of different scanning speed on the comprehensive properties of Ag/FTO thin films with circular hole array structure was studied by changing the laser spot scanning mode to circular scanning mode.It was found that the spatter around the circular hole could be reduced with smaller energy density and circular scanning mode,and the annealing effect was better.At this time,the comprehensive properties of the thin films were greatly affected by the parameters of circular hole and the metal coverage of Ag layer on the surface.When the scanning speed is 10 mm/s,the maximum figure of merit value was 3.41×10-3?-1(the average transmittance was 70.1%,and the square resistance was 8.3?/sq),suggesting that the laser circular scanning mode can effectively improve the comprehensive performance of the film with hole array structure.
Keywords/Search Tags:Ag thin film, FTO thin film, Laser ablation, Magnetron sputtering, Hole array structure, Figure of merit
PDF Full Text Request
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