Font Size: a A A

Study On Interface Modification And Properties Of Sb2S3 Semic-onductor Compound Thin Film Cells

Posted on:2022-07-10Degree:MasterType:Thesis
Country:ChinaCandidate:H NingFull Text:PDF
GTID:2481306518971799Subject:Master of Engineering
Abstract/Summary:PDF Full Text Request
Antimony sulfide(Sb2S3)is widely favored by researchers because of its high light absorption coefficient(up to 105cm-1),suitable band gap(1.5?2.2e V),low cast,non-toxicity and high stability.But the maximum efficiency that has been reported for Sb2S3 solar cells is 7.5%,which is much lower than the theoretical efficiency,such relatively low efficiency is mainly due to the poor circuit current.The film quality and interface problems of the absorption layer limit the further improvement of the current density.In this study,we improve the efficiency of Sb2S3 solar cells by doping and interface modification.The main research contents are as follows:(1)In this study,we doped cadmium sulphide(Cd S)films with potassium,increased the crystallinity and optical transmission of Cd S films.These films were used as a buffer layer to improve the efficiency of Sb2S3solar cells.The potassium diffused into the Sb2S3 film increased their crystallinity and light absorption,decreased its surface roughness.All the photoelectric parameters of the Sb2S3 solar cells were improved by dual-functional potassium doping.The device efficiency increased from 4.57%to 6.53%,and a high current density of 15.29 mA cm-2 was achieved.(2)In this paper,selenium was doped into Sb2S3 film by dual-temperature tube furnace,magnetron sputtering and solution method to prepare Sb2(SxSe1-x)3 film.When selenizing by tube furnace,the temperature of selenium is 245?,the temperature range of Sb2S3film is340?and the selenization time of tube furnace is 25min,the efficiency of Sb2(SxSe1-x)3 solar cells increased from 4.57%to 5.81%;When selenizing by magnetron sputtering,the sputtering power is 4w,the substrate temperature is 250?and the sputtering time is 10min,obtained the efficiency of 5.61%,along with an increase in the current density of34.55%,an increase in the FF of 30%;The Sb2(SxSe1-x)3 film deposited by hydrothermal method was explored.It was found that the optimum conditions for hydrothermal deposition of Sb2(SxSe1-x)3 film were as follows:high temperature reactor as container 130?heat preservation140min,the optimum selenourea concentration is 5m M.We finally obtained the efficiency of 4.84%.(3)In this chapter,the surface treatment of Sb2(SxSe1-x)3 film was carried out with different kinds of phthalocyanine chlorobenzene solutions.And we found that the treatment of copper phthalocyanine chlorobenzene solution with a concentration of 0.25m M can effectively improve the performance of the device.Phthalocyanine treatment improved the quality of Sb2(SxSe1-x)3 film and refuces the interface defects.The current density,open circuit voltage and FF have been improved.The efficiency of Sb2(SxSe1-x)3 solar cell increased from 5.62%to 6.61%.
Keywords/Search Tags:Thin-film solar cells, Sb2S3, interface modification, doping
PDF Full Text Request
Related items